First passively-quenched single photon counting avalanche photodiode element integrated in a conventional CMOS process with 32ns dead time

Rochas, A.; Ribordy, G.; Furrer, B.; Besse, P.‐A.; Popović, R.S.

doi:10.1117/12.474869

Cited by 18 publications

(14 citation statements)

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“…Since the birth in 1960s, single-photon avalanche diodes (SPADs) advanced with Si-based semiconductor technology [1,2]. The state-of-the-art CMOS single-photon avalanche diodes (SPADs) operated in Geiger mode exhibit low dark-count rate (DCR), high photon-detection probability (PDP), excellent timing resolution, and weak afterpulsing effect [3][4][5][6]. Benefited by the powerful integrated circuits (ICs) provided by mature silicon technology, CMOS SPADs outperform other photon-counting devices, such as photo-multiplier tube and chargecoupled devices.…”

Section: Introductionmentioning

confidence: 99%

Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

Huang

Wang

et al. 2017

Opt. Express

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We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-µm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.

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Section: Introductionmentioning

confidence: 99%

Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

Huang

Wang

et al. 2017

Opt. Express

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“…The voltage across the diode falls to breakdown and increases the output voltage V o . The avalanche current is passively quenched in a few nanoseconds [7].…”

Section: Methodsmentioning

confidence: 99%

FIB-SEM as a tool for characterizing single-photon detectors

Vilà¹,

Trenado²,

Comerma-Montells³

et al. 2010

Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon

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Single-photon avalanche diodes (SPADs) are nowadays the most consolidate solid-state alternative to photomultiplier tubes and time-correlated single-photon counting. Optical benches are used for the characterization of the noise figures of these detectors, including dark count, afterpulsing effects and cross-talk. With accurate optical setups it is possible to obtain resolutions down to 5 microns, but with today's technologies, this spot size can cover more than one single pixel. Moreover, on other common and envisaged applications like particle detection in Nuclear and High Energy Physics or as silicon photomultipliers for Cerenkov telescopes, this does not allow to observe what happens when a charge is generated between consecutive pixels. This work presents the innovative characterization of single-photon detectors with the aid of the electron beam generated in a dual beam FIB/SEM apparatus. A simple setup allows a very good control of the dose and the spot down to 5 nm at 30 keV, The characterization has been proven in photodetectors fabricated in a standard CMOS technology. The results have been validated by comparison with those obtained by optical setups, with simulation with PENELOPE (Penetration and Energy Loss of Positrons and Electrons) and by technology simulations with ISE-tCAD.

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“…SPAD cells were m m squares in an array of cells with a m pitch, for a fill factor of 50% under the scintillator. SPAD dead time was set to 30 ns [21]. After-pulsing and cross-talk were not considered in these simulations.…”

Section: A Simulation Setupmentioning

confidence: 99%

Dark Count Impact for First Photon Discriminators for SPAD Digital Arrays in PET

Tetrault

Therrien

Lamy

et al. 2015

IEEE Trans. Nucl. Sci.

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To increase contrast in positron emission tomography (PET) images, researchers are investigating detectors that reach below the nanosecond timing resolution. This allows a tight coincidence window which reduces random coincidence counts in the acquired data, as well as to include time-of-flight information into the reconstruction algorithms. With this goal in mind, single photon avalanche diode (SPAD) arrays have been under study for their excellent timing performances. However, their spurious dark counts can blur the start of PET signals where timing information is the most precise and create false starts in the acquisition system, introducing dead time. To minimize these problems in digital SPAD systems using a single time to digital converter (TDC) per PET channel, dark count discriminator circuits are required to reduce timing errors and increase the triggering efficiency in presence of dark counts. This paper compares the performance of a probabilistic and a novel delay line based dark count discriminator. Simulations of a SPAD array investigate the impact of dark counts on triggering efficiency and coincidence timing. Results show that the probabilistic discriminator provides excellent event recovery with regard to dark counts at the cost of some coincidence timing resolution. On the other hand, the delay line discriminator maintains the peak coincidence timing resolution but does not provide as much efficiency at high dark count rate levels.Index Terms-CMOS, dark count rate, digital readout, first photon discriminator, integrated circuits, photodetector, positron emission tomography (PET), scintillation detector, single photon avalanche diode (SPAD), time-of-flight, timing resolution.

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First passively-quenched single photon counting avalanche photodiode element integrated in a conventional CMOS process with 32ns dead time

Cited by 18 publications

References 0 publications

Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

FIB-SEM as a tool for characterizing single-photon detectors

Dark Count Impact for First Photon Discriminators for SPAD Digital Arrays in PET

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