Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Jung, Soon‐Won; Choi, Jeong-Seon; Koo, Jae Bon; Park, Chan Woo; Na, Bock Soon; Oh, Jiyoung; Lim, Sang Chul; Lee, Sang Seok; Chu, Hye Yong; Yoon, Sung‐Min

doi:10.1016/j.orgel.2014.08.051

Cited by 45 publications

(20 citation statements)

References 37 publications

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“…High performance flexible OMDs, including organic resistors [195][196][197][198][199][200], OFET memories [16,39,[201][202][203][204][205][206][207][208] and other complex-structured memories [209,210], are vastly investigated concerning high switching speed, high on/off ratios, long retention time, and even multi-level states or multi-functionalities [211]. They show tremendous applications in sensor arrays [212][213][214], braille displays [39], integrated circuits [215] and RFIDs [48].…”

Section: Ultraflexible Organic Memory Devicesmentioning

confidence: 99%

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Qian

Zhang

et al. 2016

Sci. China Mater.

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Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight, flexibility, reproducible semiconductor resources, easy tuning of functional properties via molecular tailoring, and low cost large-area solution-procession. Among them, ultraflexible electronics, usually with minimum bending radius of less than 1 mm, are essential for the development of epidermal and bio-implanted electronics, wearable electronics, collapsible and portable electronics, three dimensional (3D) surface compliable electronics, and bionics. This review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics, and design of ultraflexible devices, then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices, focusing on organic field effect transistors, organic light-emitting diodes, organic solar cells and organic memory devices.

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Section: Ultraflexible Organic Memory Devicesmentioning

confidence: 99%

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Qian

Zhang

et al. 2016

Sci. China Mater.

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“…Nonetheless organic semiconductors can be formed at low temperatures, and most of them can be deposited by a solution process. Thus, many researchers used organic semiconductors when they fabricated FeFETs on flexible substrates [7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Kim

Han

et al. 2017

IEICE Electron. Express

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We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

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“…3 Memory devices based on organic materials are attractive because of their unique properties, such as a lightweight, flexibility, and printability. 4 There have been reports devoted to several types of organic memory devices, dynamic random access memory (DRAM), 5 static random access memory (SRAM), 6 flash memory, 7 and ferroelectric devices such as ferroelectric capacitors and ferroelectric field-effect transistors (FeFETs). 8 FeFET devices have several advantages that make them superior to other types of memories because, such as non-volatility, non-destructive data read-out, ease of integration, and adaptability to conventional OFET printing and fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

“…By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10 4 . Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process.…”

mentioning

confidence: 99%

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

et al. 2015

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We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 104. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.

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Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Cited by 45 publications

References 37 publications

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Thin-film organic semiconductor devices: from flexibility to ultraflexibility

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

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