GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

Abstract

Transfer of GaAs layers onto Si by helium and/or hydrogen implantation and wafer bonding was investigated. The optimum conditions for achieving blistering/splitting only after postimplantation annealing were experimentally obtained. It was found that specific implantation conditions induce large area exfoliation instead of blistering after annealing of unbonded GaAs. This effect is related to a narrow size and/or a depth distribution of the platelets in as-implanted GaAs and their evolution with annealing. The influence of substrate orientation in blistering/splitting of GaAs was also investigated. Thin GaAs layers were transferred onto silicon by a combination of He and/or H implantation, wafer bonding and low temperature annealing.

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

“…Wafer bonding and layer transfer has now been applied to semiconductors other than silicon such as Ge, InP, GaAs, and GaN. [2][3][4][5][6] The mechanism of H-induced exfoliation has been extensively studied in the case of silicon, 7,8 and, more recently, in the case of InP. 9 The early work of Weldon et al provided important conclusions: ͑i͒ implantation induced defects serve to trap H within the Si substrate.…”

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

“…Indeed, it was only recently shown that the concept of hydrogen-induced exfoliation can be applied to the transfer of thin films of InP and GaAs to foreign substrates. [6][7][8] Moreover, a detailed understanding of the role of H in these materials is still lacking.…”

Влияние Имплантации H-=sup=-+-=/Sup=- На Оптические Свойства Кристаллов Полуизолирующего Арсенида Галлия В Ик-Области Спектра

“…Что касается имплантации ионов водорода (протонов), то она может использоваться как для целенаправленного введения дефектов (в основном точечных) при небольших дозах имплантации, так и в так называемой Smart-Cut техно-логии для создания полупроводниковых структур с ди-электрической изоляцией. Последнее касается как наи-более распространенных структур кремний-на-изолято-ре (SOI) [4], германий-на-изоляторе (GeOI) [5], так и структур на основе сложных полупроводников [3], в том числе структур арсенид галлия на изоляторе (GOI) [6,7].…”