GaN-Based Robust Low-Noise Amplifiers

Abstract

In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricated in GaN technology is provided, highlighting their noise performance together with high-linearity and high-robustness capabilities. Several SELEX-ES GaN monolithic technologies are detailed, providing the results of the noise characterization and modeling on sample devices. An in-depth review of three LNAs based on the 0.25-µm GaN HEMT process, marginally described in previous publications, is then presented. In particular, two robust and broadband 2-18-GHz monolithic microwave integrated circuit (MMIC) LNAs are designed, fabricated, and tested, exhibiting robustness to over 40-dBm input power levels; an X-band MMIC LNA, suitable for synthetic aperture radar systems, is also designed and realized, for which measurement results show a noise figure ∼2.2 dB with an associated gain >25 dB and robustness up to 41-dBm input power level.

A S/C/X-Band GaN Low Noise Amplifier MMIC

“…[6] . 따라서 S/C/X-대역의 광대역에 평탄한 이득 특성과 입/출력 정합이 쉽고, 칩 사 이즈를 줄일 수 있는 저항 피드백 구조를 이용하였다 [7], [8] . Ref [3] Ref [4] Ref [6] …”

T/R modules front-end integration in GaN technology

“…an eventual core chip), exhibiting at the same time an OTP3 better than 23 dBm. Regarding Rx mode survivability [11], for the sake of brevity in the following Figure 19 the peak waveform values for the input stage of the LNA are reported for the UMS design. Overall power consumption of the Rx-mode SCFE is, for both design, 280 m W in small signal operation reaching 450 m W during overdrive.…”

Selex ES GaN Technology improvements, results and R&D approach for Defense and Space application

“…The GaN-based LNA robustness has been demonstrated in several different realizations [5] making use of the Selex ES GaN technology. More in particular, if space applications are considered, in below a microphotograph of a X-Band robust GaN HEMT MMIC amplifier is reported.…”