GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz

Hughes, B.; Lazar, James; Hulsey, S.D.; Zehnder, Daniel; Matic, Daniel; Boutros, K. S.

doi:10.1109/apec.2012.6166174

Cited by 48 publications

(20 citation statements)

References 5 publications

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“…This can be explained in part by the very low specific on-resistance of these devices. The small die size of these devices results in support for very fast switching: SiC vertical channel JFETs were recently reported to switch 20 A at 600 V at speeds of greater than 30 V/ns [32]; GaN HFETs were recently reported to switch 20 A at 350 V at speeds of 80 V/ns [7]. Commercially available SiC lateral-channel MOSFETs, on the other hand, have reduced susceptibility to self-sustained oscillation.…”

Section: Literature Reviewmentioning

confidence: 98%

“…However, the same fast-switching properties that enable this system-level benefit can have other less desirable side-effects as well. One commonly reported complication encountered in design of systems with WBG devices is the presence of an undesirable level of under-damped natural response in the application circuit [2]- [7]. The primary reason for this pronounced natural ring-down is the switching characteristics of the WBG transistors employed in these designs.…”

Section: Introductionmentioning

confidence: 98%

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Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Lemmon

Mazzola

Gafford

et al. 2014

IEEE Trans. Power Electron.

142

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Wide band-gap (WBG) field-effect devices are known to provide a system-level performance benefit compared to silicon devices when integrated into power electronics applications. However, the near-ideal features of these switching devices can also introduce unexpected behavior in practical systems due to the presence of parasitic elements. The occurrence of self-sustained oscillation is one such behavior that has not received adequate study in the literature. This paper provides an analytical treatment of this phenomenon by casting the switching circuit as an unintentional negative resistance oscillator. This treatment utilizes an established procedure from the oscillator design literature and applies it to the problem of power circuit oscillation. A simulation study is provided to identify the sensitivity of the model to various parameters, and the predictive value of the model is confirmed by experiment involving two exemplary WBG devices: a SiC vertical-channel JFET and a SiC lateral-channel MOSFET. The results of this study suggest that susceptibility to self-sustained oscillation is correlated to the available power density of the device relative to the parasitic elements in the circuit, for which wide band-gap devices, to include SiC and GaN transistors, are in a class approaching that of the radio frequency domain.

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Section: Literature Reviewmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Lemmon

Mazzola

Gafford

et al. 2014

IEEE Trans. Power Electron.

142

View full text Add to dashboard Cite

show abstract

“…V GS_GaN remains almost constant during this stage with the same reason described in [16]. Although C DS_GaN does not participate in oscillation during [t 1 -t 2 ], V DS_GaN and V GD_GaN still satisfy the KVL law which is shown in equation (4). Therefore, at t 2 , i LP reaches 0A, and V DS_GaN reaches the valley point which is lower than the ideal case.…”

Section: B Divergent Oscillation Issue Of Cascode Gan Device Under Hmentioning

confidence: 48%

Avoiding divergent oscillation of cascode GaN device under high current turn-off condition

Wei

Huang

Lee

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Cascode structure is widely used for high voltage normally-on GaN devices. However, the capacitance mismatch between the high voltage GaN device and the low voltage normally-off Si MOSFET may induce several undesired features, such as Si MOSFET reaches avalanche during turn-off, and high voltage GaN device loses ZVS turn-on condition internally during soft-switching turn-on process in every switching cycle. This paper presents another issue associated with the capacitance mismatch in the cascode GaN devices. Divergent oscillation could occur at high current turn-off condition, and eventually destroy the device. The intrinsic reason of this phenomenon is analyzed in detail in this paper. A simple solution is proposed by adding an additional capacitor whose position is critical and should be optimized. Experimental results validate the theoretical analysis, and show that the proposed method improves device performance significantly under high current turn-off condition.

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“…This feature eliminates the need for freewheeling diodes in inverters and in synchronous converters. To test this principle, HRL has demonstrated the operation of both inverters and synchronous converters without freewheeling diodes [4]. …”

Section: E Elimination Of the Free-wheeling Diodementioning

confidence: 99%

GaN power electronics for automotive application

Boutros

Chu

Hughes

2012

2012 IEEE Energytech

Self Cite

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Gallium Nitride p ower devices are p oised to re p lace silicon-based MOSFETs and IGBTs in automotive p ower switching a pp lications.With its p rojected lOOx p erformance advantage over silicon, GaN is a game changing technology for p ower electronics. This p a p er reviews the advantages of GaN material and devices, the p erformance of these devices in p ower circuits, and the remaining challenges facing the technology.Index Terms--Gallium Nitride, GaN, GaN-on-Si, hetero structure field-effect-transistor, HFET, p ower switch, automotive a pp lications.

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GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz

Cited by 48 publications

References 5 publications

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

Avoiding divergent oscillation of cascode GaN device under high current turn-off condition

GaN power electronics for automotive application

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