GaS and GaSe Ultrathin Layer Transistors

Late, Dattatray J.; Liu, Bin; Luo, Jiajun; Yan, Aiming; Matte, H. S. S. Ramakrishna; Grayson, M.; Rao, C. N. R.; Dravid, Vinayak P.

doi:10.1002/adma.201201361

Cited by 617 publications

(496 citation statements)

References 41 publications

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“…Because of this merit, Few layered 2DLMCs such as transition metal dichalcogenides (TMDs) (MoS 2 ,26, 27, 28 WS 2 ,29, 30, 31, 32, 33, 34, 35, 36 TiS 3 ,37 etc.) and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…In addition to graphene, other 2D crystals such as germanene, 2,3 silicene, 4,5 stanene, 6,7 transition-metal dichalcogenides (TMDs), [8][9][10][11][12] and post-transitionmetal chalcogenides (TMCs) [13][14][15] have been predicted and successfully synthesized. One of the most prominent members of 2D crystals is MoS 2 .…”

Section: Discovery Of Graphenementioning

confidence: 99%

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

İyikanat

Akbalı

Kang

et al. 2017

J. Phys.: Condens. Matter

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Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be derived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities.Moreover, we show that the ultra-thin CdTe has some interesting electromechanical features, such as strain-dependent anisotropic variation of the band gap value, and its rapid increase under perpendicular compression. The direct band gap semiconducting nature of the ultra-thin CdTe crystal remains unchanged under all types of applied strain. With a robust and moderate direct band gap, single-layer CdTe is a promising material for nanoscale strain dependent device applications.

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“…Experimental studies have demonstrated synthesis of monolayers and or few layers of GaS, GaSe and InSe thin films. 10,[14][15][16][17][18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Wickramaratne

Zahid²,

Lake

2015

Journal of Applied Physics

139

114

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The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a 'Mexican hat' or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi 2 Se 3 , for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi 2 Se 3 is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

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GaS and GaSe Ultrathin Layer Transistors

Cited by 617 publications

References 41 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Stable ultra-thin CdTe crystal: a robust direct gap semiconductor

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

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