2005
DOI: 10.1063/1.2031941
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Germanium hut nanostressors on freestanding thin silicon membranes

Abstract: The heteroepitaxial growth of Ge on thin Si membranes can lead to significant bending under self-assembled Ge hut nanostructures. Undercut silicon-on-insulator mesas approximate a Si freestanding membrane and serve as a crystalline substrate for the growth of Ge huts. Synchrotron x-ray microdiffraction shows a local curvature on the lateral scale of the size of the hut and an overall bending of the freestanding region. In comparison with conventional mechanically rigid substrates, the freestanding film can ben… Show more

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Cited by 18 publications
(16 citation statements)
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“…Compared with the bulk counterpart, XOI system exhibits less parasitic capacitance and lower power consumption, which makes it an excellent platform for high‐performance electronic devices . The compound nanomembranes can be semiconductors such as silicon and germanium, or insulators such as nanocrystalline diamond and vanadium dioxide (VO 2 ) . Other materials could be further deposited on the topmost nanomembranes to achieve more properties.…”
Section: Release Methodsmentioning
confidence: 99%
“…Compared with the bulk counterpart, XOI system exhibits less parasitic capacitance and lower power consumption, which makes it an excellent platform for high‐performance electronic devices . The compound nanomembranes can be semiconductors such as silicon and germanium, or insulators such as nanocrystalline diamond and vanadium dioxide (VO 2 ) . Other materials could be further deposited on the topmost nanomembranes to achieve more properties.…”
Section: Release Methodsmentioning
confidence: 99%
“…The x-ray reflectivity curves were interpreted using a model consisting of the top STO layer, a BTO layer, and the STO substrate. The density of crystalline STO substrate was fixed at 5.1 g/cm 3 . The densities of amorphous STO and BTO were determined from the analysis of curve (ii), with values of 4.2 g/cm 3 and 4.5 g/cm 3 , respectively.…”
Section: A In Situ X-ray Reflectivitymentioning
confidence: 99%
“…The density of crystalline STO substrate was fixed at 5.1 g/cm 3 . The densities of amorphous STO and BTO were determined from the analysis of curve (ii), with values of 4.2 g/cm 3 and 4.5 g/cm 3 , respectively. The thicknesses obtained from the fits were, for curve (ii) a BTO thickness of 2.4 nm and an STO thickness of 0.6 nm and, for curve (iii), an additional 9.5 nm of STO.…”
Section: A In Situ X-ray Reflectivitymentioning
confidence: 99%
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“…The anisotropy in the strain/stress also remarkably influences the geometries of the structures because the nanomembranes prefer to bend/roll along the compliant direction due to the elastic energy minimization. For instance, the <100> directions in single crystal Si are the most compliant with the smallest Young's modulus, and the rolling along this direction is energetically favorable 47, 229. Therefore, if the nanomembrane is released (for example, by chemical under etching) along the most compliant direction, micro‐/nanotubes will be formed 26.…”
Section: Self‐rolled Nanomembranesmentioning
confidence: 99%