Graphene Quantum Dots Doping of MoS<sub>2</sub> Monolayers

Li, Ziwei; Ye, Ruquan; Feng, Rui; Kang, Yimin; Zhu, Xing; Tour, James M.; Fang, Zheyu

doi:10.1002/adma.201501888

Cited by 175 publications

(186 citation statements)

References 41 publications

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“…On the contrary, plasmonics enable strong light-matter interaction with 2D materials due to high field concentration [135][136][137][138]. Additionally, it has been shown that surface plasmons in metallic nanoparticles can directly interact with 2D materials through hot electron injection [42,[139][140][141][142][143]. For instance, hot electrons can change the doping of graphene [140] or molybdenum disulfide (MoS 2 ) [42,143], leading to structural phase transitions [42] or modulation of the absorption spectrum [143].…”

Section: Hot Electrons With 2d Materialsmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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Abstract:Although the nonradiative decay of surface plasmons was once thought to be only a parasitic process within the plasmonic and metamaterial communities, hot carriers generated from nonradiative plasmon decay offer new opportunities for harnessing absorption loss. Hot carriers can be harnessed for applications ranging from chemical catalysis, photothermal heating, photovoltaics, and photodetection. Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized. The challenges and potential future directions are also discussed.

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Section: Hot Electrons With 2d Materialsmentioning

confidence: 99%

Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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“…The drain–source current is controlled by the gate voltage on the dielectric layer. High carrier mobility, high switching ratio and low subthreshold swing means high performance FET, which depends on the metal contacts,247 channel materials (thickness,248, 249 doping,192, 250, 251, 252, 253, 254 heterostructures200, 208), dielectric materials (back‐gate,86, 255 top‐gate,256 liquid gate257), and so forth. 2D GIVMCs based FETs have demonstrated exciting performance.…”

Section: Device Applicationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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“…The absorption and recombination of excitons directly affect the light absorption and luminescence of semiconductors. In 2D semiconductor materials [63][64][65][66] , due to their low dimensionality and surface defects, the spatial resolution must be reduced to the nanometer scale in order to study exciton recombination and optical properties. However, the traditional photoluminescence is restricted at sub-nanoscale due to the diffraction limit of incident light.…”

Section: Microscopy For Semiconductorsmentioning

confidence: 99%

Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures

Liu¹,

Jiang²,

Hu³

et al. 2018

Opto-Electronic Advances

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Cathodoluminescence (CL) as a radiative light produced by an electron beam exciting a luminescent material, has been widely used in imaging and spectroscopic detection of semiconductor, mineral and biological samples with an ultrahigh spatial resolution. Conventional CL spectroscopy shows an excellent performance in characterization of traditional material luminescence, such as spatial composition variations and fluorescent displays. With the development of nanotechnology, advances of modern microscopy enable CL technique to obtain deep valuable insight of the testing sample, and further extend its applications in the material science, especially for opto-electronic investigations at nanoscale. In this article, we review the study of CL microscopy applied in semiconductor nanostructures for the dislocation, carrier diffusion, band structure, doping level and exciton recombination. Then advantages of CL in revealing and manipulating surface plasmon resonances of metallic nanoantennas are discussed. Finally, the challenge of CL technology is summarized, and potential CL applications for the future opto-electronic study are proposed.

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Graphene Quantum Dots Doping of MoS₂ Monolayers

Cited by 175 publications

References 41 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures

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Graphene Quantum Dots Doping of MoS2 Monolayers

Cited by 175 publications

References 41 publications

Harvesting the loss: surface plasmon-based hot electron photodetection

Harvesting the loss: surface plasmon-based hot electron photodetection

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Scanning cathodoluminescence microscopy: applications in semiconductor and metallic nanostructures

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Graphene Quantum Dots Doping of MoS₂ Monolayers