2000
DOI: 10.1016/s0040-6090(00)00901-9
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Growth and characterization of 70Ge /74Ge isotope superlattices

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Cited by 20 publications
(11 citation statements)
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“…342 The formation of nanostructures (including ferromagnetic ones) in MnAs films (T C = 310 K) deposited on GaAs(001) substrate was observed at 30 °C. 343 Unstable compounds CrAs 209, 344 and CrSb 345 with the zinc blende structure were prepared by deposition on GaAs substrates. These materials possess room temperature ferromagnetism.…”
Section: Inhomogeneous Magnetic Materialsmentioning
confidence: 99%
“…342 The formation of nanostructures (including ferromagnetic ones) in MnAs films (T C = 310 K) deposited on GaAs(001) substrate was observed at 30 °C. 343 Unstable compounds CrAs 209, 344 and CrSb 345 with the zinc blende structure were prepared by deposition on GaAs substrates. These materials possess room temperature ferromagnetism.…”
Section: Inhomogeneous Magnetic Materialsmentioning
confidence: 99%
“…Göbel et al formed ( 69 GaX) n ( 71 GaX) n [X = P or As] and observed Raman spectra changes due to the isotopic superlattice. 12 Morita et al also fabricated 70 Ge n / 74 Ge n isotope superlattices, 13 and observed zone-folding of optical phonons due to mass periodicity in the growth direction.…”
Section: Introductionmentioning
confidence: 99%
“…They have been realized using Si [1], Ge [2][3][4], GaAs, GaP and GaSb [5]. For example, naturally available silicon ( nat Si) is composed of three stable isotopes in fixed proportion ( 28 Si: 92.2 at.%, 29 Si: 4.7 at.%, 30 Si: 3.1 at.%).…”
Section: Introductionmentioning
confidence: 99%
“…With the isotope SLs, we expect to observe characteristic phonon frequencies which appear due to confinement longitudinal optical (LO) phonons in specific isotope layers [1][2][3][4][5]. Comparison of such peaks with calculation assuming appropriate number of monolayer (ML) n and degree of interface intermixing l will allow for determination of n and l in each superlattice.…”
Section: Introductionmentioning
confidence: 99%