Helium in silicon: Thermal-desorption investigation of bubble precursors

Vacancy Cluster Distributions in He Implanted Silicon Studied by Slow Positron Annihilation Spectroscopy

“…In the 2 x 10 I n t h i s t e m p e r a t u r e range the defects distribution moves towards a mean depth of about 95 nm. The formation of these vacancy clusters is strictly related to the out-diffusion of He trapped in stronger defects [5]. At the annealing temperature of 700°C there is the appearance of the first cavities (Sd = 1.0112) confirmed by TEM measurements.…”

“…Information about the evolution of He and of the displaced silicon atoms distributions was obtained by elastic recoil detection (ERD) and Rutherford backscattering in channelling (RBS-C) [3,4]. Thermal programmed desorption (TPD) [5] was employed to obtain information about thermodynamics and kinetics quantity. TEM was used on selected samples to identify the nanostructures.…”

Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering

“…Initially it was suggested that a subsequent thermal annealing can cause the helium to diffuse out of the bubbles leaving behind empty cavities with dimensions in the range 5-100 nm [3,4]. Since that work, many experiments were performed to understand the exact process of helium thermal effusion [2,[5][6][7][8][9]. It is now well established that helium release depends on the implantation parameters (energy, depth) and on the annealing procedure (heating rate conditions, time and maximum temperature).…”

High-dose helium-implanted single-crystal silicon: Annealing behavior

“…In a previous paper, 7 we have studied the helium-defect interactions by thermal desorption spectrometry. In that work, a low implantation dose, 5ϫ10 15 at/cm 2 , was intentionally chosen to investigate the cavity precursors.…”