High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

Abstract

Ultrahigh channel mobility is demonstrated for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with Al2O3 gate insulators fabricated at low temperatures by metal-organic chemical-vapor deposition. Relatively high field effect channel mobility of 64cm2∕Vs is obtained when the Al2O3 gate insulator is deposited at 190°C. Furthermore, extremely high field effect mobility of 284cm2∕Vs was obtained for a MOSFET fabricated with an ultrathin thermally grown SiOx layer inserted between the Al2O3 and SiC.

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

“…Recently, wide band gap semiconductors such as SiC, GaN, and diamond have been developed in order to replace silicon partly for power devices due to their high carrier mobility and high breakdown field123. In particular, the diamond is considered to be an ideal material for the application of power devices due to its theoretical low power-loss at a high voltage4.…”

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

“…Most importantly, it does not possess the same dominating trap level as SiO 2 , so that high electron mobility can be achieved in n-channel devices. Indeed, peak field-effect mobility values measured at room temperature on the Si-face can exceed 100 cm 2 /V.s [60,79]. A key observation is again that a thin thermal SiO or SiON layer is still required, not so much to reduce gate leakage but to increase efficiency by providing a progressive transition between the semiconductor and the deposited oxide.…”

A new 4H-SiC hydrogen sensor with oxide ramp termination

“…Therefore, in order to increase the sensitivity, alternative insulator layers replacing SiO 2 (i.e. HfO 2 , HfO 2 /SiO 2 [15], ZrO 2 [16], Al 2 O 3 [17], AlN [18], and Ta 2 O 5 [7,19]) as well as post-oxidation treatments have been investigated. Another crucial issue for MOS capacitors, especially those operating under extreme conditions, is the reliability of gate dielectrics [20].…”