High Dopant Activation And Low Damage P+ USJ Formation

Borland, John; Shishiguchi, S.; Mineji, A.; Krull, W.; Jacobson, D. C.; Tanjyo, Masayasu; Lerch, W.; Paul, S.; Gelpey, J.; McCoy, S.; Venturini, J.; Current, Michael; Faifer, Vladimir; Hillard, Robert; Benjamin, Mark C.; Walker, Tom; Li, Zhiqiang; Chen, James

doi:10.1063/1.2401470

Cited by 7 publications

(6 citation statements)

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“…This temperature is far above the Si melting point of 1410°C. The limited cluster dissociation leads to poor dopant activation [47][48][49] and, by related mechanisms, to the incomplete removal of EOR defects [49][50][51] commonly observed in microsecond annealing.…”

Section: Fig 7 Data Ofmentioning

confidence: 99%

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok

Braatz

Paul

et al. 2009

Journal of Applied Physics

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Millisecond annealing techniques with flash lamps or lasers have become increasingly common for activating dopants and eliminating implantation-induced damage after ion implantation for transistor junction formation in silicon. Empirical data show that such techniques confer significant benefits, but key physical mechanisms underlying these benefits are not well understood. The present work employs numerical simulation and analytical modeling to show that for boron, millisecond annealing reduces unwanted dopant spreading by greatly reducing the time for diffusion, which more than compensates for an increased concentration of Si interstitials that promote dopant spreading. Millisecond annealing also favorably alters the relative balance of boron interstitial sequestration by the crystal lattice vs interstitial clusters, which leads to improved electrical activation at depths just short of the junction.

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Section: Fig 7 Data Ofmentioning

confidence: 99%

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok

Braatz

Paul

et al. 2009

Journal of Applied Physics

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“…The shallow junction requirement places tight constraints on allowable energy contamination, usually <0.1%, limiting decel ratios to <2 to 1. The BF2 option would require energy in the range of 250-500eV, but residual implant damage, end of range (EOR) defects and other adverse effects of fluorine make this option less desirable [10]. On the other hand using molecular dopant species such as B18H22, the operational energy would be 1-2keV in drift mode and avoid the defect issues with BF2 and PAI+B implants.…”

Section: Implant Optionsmentioning

confidence: 99%

32nm Node USJ Implant & Annealing Options

Borland¹

2007

2007 15th International Conference on Advanced Thermal Processing of Semiconductors

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For the 32nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required for process optimization to reduce these effects. Also, molecular dopant species (B18H22, P2 & As2) and high mass dopants (Sb) for n & p type SDE and HALO implantation are shown to give highest quality junctions and enhanced dopant activation with msec and SPE diffusion-less annealing techniques. To minimize strain-Si relaxation and high-k/metal gate degradation process integration trade-offs are required.

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“…Room temperature, edge-band, carrier-lifetime-reliant photoluminescence imaging (PLi) has been increasingly used in recent years for characterization of Si and SiGe materials. [1][2][3][4][5][6][7][8] Even though the radiative recombination rate, i.e. photoluminescence intensity, in indirect band-gap semiconductors is low, the effect is measurable and can be successfully applied to characterization of defects and contamination.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence-Based Metrology for Si and SiGe Materials

Buczkowski

2007

ECS Trans.

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Application of room temperature, edge-band, carrier-lifetime-reliant photoluminescence metrology for characterization of contamination and defectivity in Si and SiGe materials is discussed in the paper. The physics of the technique is illustrated using 2D-Axisymmetric PL intensity modeling examples. PL signals are simulated for a variety of ion-implanted Ultra Shallow Junction (USJ) silicon and epitaxial Si/SiGe/Si structures. High PLi sensitivity to defect presence, ion implantation dose, energy, specie and implantation conditions (implanter tool signatures) is demonstrated and ultimately applied to detect process variations at sub-1% levels. Examples of quantifiable doping activation effects, defect re-growth kinetics, contamination presence, annealing quality, and formation and relaxation of extended defects are also provided.

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High Dopant Activation And Low Damage P+ USJ Formation

Cited by 7 publications

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Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

32nm Node USJ Implant & Annealing Options

Photoluminescence-Based Metrology for Si and SiGe Materials

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High Dopant Activation And Low Damage P+ USJ Formation

Cited by 7 publications

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Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

32nm Node USJ Implant &#x00026; Annealing Options

Photoluminescence-Based Metrology for Si and SiGe Materials

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32nm Node USJ Implant & Annealing Options