In accordance with decrease of device size, ultra shallow junctions are required for realizing superior device performance. Enhanced diffusion caused by implantation is a crucial factor to realize ultra shallow junctions. Not only implant but also RTA conditions are key factors to suppress enhanced diffusion. In this paper, process conditions to minimize enhanced diffusion are discussed. Implant ion species, energy, dose and beam current parameters are investigated for implantation and temperature, time and ramping rate parameters are investigated for RTA. Important result is that optimization of not only implant but also RTA conditions should be carried out in order to fabricate ultra shallow junctions.

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An apparatus has been developed which permits rapid collection of X‐ray powder diffraction data for structure refinement by pattern analysis. The apparatus is built on a cylindrical position‐sensitive detector with an angular aperture of 120° and resolution of 0.05° in 2θ. The detector uses a metal blade as anode and works in the self‐quenching streamer mode of gas ionization. A wide‐angle powder pattern can be recorded simultaneously from a stationary specimen, where geometrical broadening of reflection lines is suppressed by limiting the angular width of the incident beam. A test made with standard corundum powder shows that a diffraction pattern with a substantially better resolution is obtainable in one‐eightieth the time compared with a normal θ–2θ diffractometer. The usefulness of the apparatus in high‐temperature work has been demonstrated in profile refinement of structural parameters for the δ phase of bismuth oxide at 1057 K.

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