Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

Mineji, A.; Shishiguchi, S.

doi:10.1109/iwjt.2006.220866

Cited by 7 publications

(6 citation statements)

References 4 publications

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“…The dose of C implantation was selected such that the C concentration resembles that in actual device structures. 25) Pre-amorphized Si isotope multilayers without C implantation were also prepared as a control sample.…”

Section: Methodsmentioning

confidence: 99%

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Isoda¹,

Uematsu²,

Itoh³

2016

Jpn. J. Appl. Phys.

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The effect of implanted carbon (C) on silicon (Si) self-diffusion has been investigated using pre-amorphized 28 Si/ nat Si multilayers. The isotope multilayers were pre-amorphized by Ge implantation followed by C implantation, and annealed at 950°C. Because of the presence of C, the Si selfdiffusion was slower in 30 min annealing than the self-diffusion without C. This was attributed to the trapping of Si self-interstitials by C. On the other hand, the Si self-diffusion with C was faster in 2 h annealing than the self-diffusion without C, except in the end-of-range (EOR) defect region. The cause of this enhanced diffusion was understood as the retardation of Ostwald ripening of EOR defects by C trapped at the defects. In the EOR defect region, however, Si self-diffusion was slower than the self-diffusion without C in both 30 min and 2 h annealing owing to the presence of C. Relaxation of the tensile strain associated with the EOR defects by the trapped C was proposed to be the main cause of the retarded diffusion in the EOR region.

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Section: Methodsmentioning

confidence: 99%

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Isoda¹,

Uematsu²,

Itoh³

2016

Jpn. J. Appl. Phys.

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“…These implantation conditions were determined so that dopant concentration resembles that in actual device structures. 15) After implantation, the wafers were cut into 5 © 5 mm 2 squares for diffusion annealing. The samples were annealed in an inert gas atmosphere using a resistively heated furnace for 800 and 900 °C and a rapid thermal annealing apparatus for 1000 °C.…”

Section: Methodsmentioning

confidence: 99%

Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures

Uematsu

Matsubara

Itoh

2014

Jpn. J. Appl. Phys.

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Diffusion of self-atoms and co-implanted carbon (C) and boron (B) in silicon (Si) has been simultaneously observed using natSi/28Si isotope heterostructures. The supersaturation of Si self-interstitials (I’s) is investigated through the 30Si diffusion. The experimental results showed that Si self-diffusion was enhanced, that is, the I is more severely supersaturated, while B diffusion near the kink region was reduced with higher C dose. We also found slower dissolution of immobile BI clusters. C diffusion was not significant, indicating the formation of immobile CI clusters. These results indicate that the reduction of B diffusion is not due to the trapping of I by C, if any, but due to the retardation of BI cluster dissolution by the presence of C to decrease the amount of mobile B. The Si self-diffusion is enhanced by the dissolution of CI clusters to emit I.

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“…A spike annealing at 1050 C was used for dopant activation. 18) Secondary ion mass spectroscopy (SIMS) depth profiles of B implanted using these techniques are shown in Fig. 1.…”

Section: Samplesmentioning

confidence: 99%

“…We used these widths because our previous study suggested that these samples would show similar minimum gate lengths (L min ). 18)…”

Section: Samplesmentioning

confidence: 99%

“…First, we describe the samples examined in this experiment. Their SDEs were fabricated using two different techniques: Ge+C+B co-implantation 17,18) and conventional BF 2 implantation. After briefly explaining the physical basics of electrostatic potential mapping by electron holography, we explain our specimen preparation technique using low-energy Ar ion milling.…”

Section: Introductionmentioning

confidence: 99%

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Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

Ikarashi¹,

Oshida²,

Miyamura³

et al. 2008

jjap

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We find a new solution of type-IIB supergravity which represents a collection of D5-branes wrapped on the topologically non-trivial S 3 of the deformed conifold geometry T * S 3 . The type-IIB solution is obtained by lifting a new solution of D = 7 SU(2) L × SU(2) R gauged supergravity to ten dimensions in which SU(2) D gauge fields in the diagonal subgroup are turned on. The supergravity solution describes a slice of the Coulomb branch in the large-N limit of N = 2 SYM in three dimensions.

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Ultra Shallow Junction and Super Steep Halo Formation Using Carbon Co-implantation for 65nm High Performance CMOS Devices

Cited by 7 publications

References 4 publications

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures

Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

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