High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance

A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

“…1 to the high impedance presenting at the common node while the 90 o TL15 isolates the turned-off port from the leakage signal coming from the common node to further reinforce the switch isolation. Compared to the conventional series-shunt topology in [4,6], the isolation of our approach is increased by at least 15 to 20 dB. At high frequency, the connecting transmission lines TL7, TL8 will dramatically change the impedance Z in .…”

“…The impedance transformation switch was introduced in [5] to improve the isolation to 30 dB. Parasitic cancelling switch was proposed in [6] to enhance isolation at Ka-band and 28.9 dB isolation was reported. In all three designs, the power is limited to only 21 dBm.…”

X-band monolithic transmit-receive switch based on a stub directional coupler

“…It follows from published reports that most TR switches have the series-shunt configuration, employing different matching circuits [6][7][8][9][10]. At the same time, insufficient consideration has been given to using stub directional couplers in multithrow switches.…”

A dual‐band network of the feeding module utilized in diverse applications of a WLAN antenna

“…The defected-ground structures, two rectangular slots, etched on the ground plane below the two chip resistors, could reduce the insertion loss due the substrate and maintain the resistance characteristics, such that the operated bandwidth can be extended and the transmission efficiency can be improved, especially at the high-frequency band. The switch configuration used in the feeding module was the single-pole-double-through (SPDT) field-effect transistor (FET) switch [5,6]. The configuration and equivalent circuit of the dual-band two-FET switch are shown in Figure 3.…”