High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

Avis, Christophe; Jang, Jin

doi:10.1039/c1jm12227d

Cited by 204 publications

(159 citation statements)

References 22 publications

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“…Moreover, fully printed TFTs show degraded performance due to the poorer quality of printed semiconductors and dielectrics compared to their conventional counterparts. [12][13][14] An alternative approach of microelectromechanical (MEM) relays with movable cantilevers operated by electrostatic wileyonlinelibrary.com state. We also develop an analytical model to calculate the turnoff voltage ( V TOF ) using differential beam bending theory with superposition of movable reed defl ection by the gate actuation force and the residual beam bending moment.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6] Thin-fi lm transistors (TFTs) are key devices in large-area electronic systems. Although extensive research on solution processed TFTs over the last decade has improved their performance signifi cantly, [7][8][9][10][11][12][13][14] further improvements in power consumption, on/off current ratio, subthreshold swing, and environmental stability are still required for a broader range of applications. Moreover, fully printed TFTs show degraded performance due to the poorer quality of printed semiconductors and dielectrics compared to their conventional counterparts.…”

Section: Introductionmentioning

confidence: 99%

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Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Karim

Chung

Alon

et al. 2016

Adv Elect Materials

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actuation can provide a solution for ultralow leakage devices with hyper-abrupt switching. [ 15 ] These deliver low leakage, excellent subthreshold swing, and very low on-resistance. Considering all the benefi ts of MEM relays over printed TFTs, printed MEM relays have been proposed as a new switching devices for low-power and large-area electronics. [ 16,17 ] Inkjet-printing is attractive for the fabrication of MEM relays due to its mask-free, vacuum-independent, low-temperature, and environment-friendly processability. [ 16 ] Although the previously reported printed MEM relays showed superior performance in terms of very low on state resistance ( R ON ) and minimal off current ( I OFF ), unfortunately, these structures are vulnerable to stress variations in the printed cantilevers that can cause the suspended beam to curl up. This happens due to the stress gradient built up across the thickness of the fi lm. [ 18 ] An in-plane tensile stress develops in the fi lm formed from the nanoparticle-based ink during the constrained sintering process. [ 19 ] However, a positive gradient of the tensile stress is also built up across the thickness of the fi lm as a result of the fi lm morphology variation caused by the differential sintering rate in the nanoparticulate cantilever layer. The scanning electron microscope (SEM) images presented in Figure S1 (Supporting Information) show different morphology at the top and the bottom of the fi lm formed from sintered silver nanoparticles. In addition to causing increased device-to-device variation, this phenomenon can increase the electrostatic actuation gap, making the MEM relays inoperable in reasonable actuation voltage ranges. Additionally, in the previously reported printed MEM relays, only the cantilever and post structure was inkjetprinted while the sacrifi cial layer was deposited using spincoating, [ 16,17 ] which leads to a poor area scalability. Therefore, a new approach in MEM relay structural design and sacrifi cial layer processing is necessary to make it viable for realistic largearea electronics realization.In this paper, we demonstrate the fi rst MEM relay with a printed sacrifi cial layer, which makes it realizable for large-area systems; the relay implements a novel reed-relay structure that provides immunity to the stress variations in the printed cantilevers. We introduced a second cantilever with higher stiffness over the switching cantilever to block the upward curling of the movable cantilever. The proposed MEM relay resembles a reed switch structure with the two reeds in a normally closed

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Karim

Chung

Alon

et al. 2016

Adv Elect Materials

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“…The presence of such nanocrystalline domains is evident also from the GIXRD measurements performed on In 2 O 3 layers on Al 2 O 3 as shown in the inset of Figure 2 d, accompanied with the broad peak of amorphous Al 2 O 3 at 2 θ = 22°. [ 33 ] The variation of the crystallinity of the fi lm with thickness and processing conditions is critical for the optimized operation of the transistors. Earlier, thin (≈7 nm) nanocrystalline In 2 O 3 fi lms have been obtained from the In-nitrate-route on thermally oxidized SiO 2 surface via spray pyrolysis at 250 °C, [ 9 ] whereas spin-coating has produced thin (<6 nm) amorphous In 2 O 3 structures with less than 10% of crystalline phase at 300 °C on chemical vapour deposited (CVD) SiO 2 surface.…”

Section: Doi: 101002/adma201502569mentioning

confidence: 99%

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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uniform, continuous and dense layers and is thus more suitable for printed TFTs with larger channel dimensions. Several precursor routes for solution-processed metal-oxide semiconductor layers based on metal alkoxides, [ 14,15 ] and on metal salts such as acetates, nitrates, and chlorides have been reported. [ 16,17 ] Precursors based on metal nitrates have been shown to convert into metal oxides generally at lower temperatures than acetateor chloride-based precursors. [ 17,18 ] In contrast to metal alkoxides, metal nitrates are less sensitive to air humidity and can be processed via an aqueous precursor route. [ 7 ] Based on these advantages, metal nitrates show promise as potential precursor materials for printed low-temperature-processed metal-oxide semiconductors. A large amount of work has concentrated on lowering the conversion temperature of the precursor solutions to semiconducting metal-oxide layers. Functional TFTs have been obtained at ≈200 °C or below (1) via the careful design of precursor chemistry utilizing metal alkoxides with controlled hydrolysis, [ 14,15 ] combustion process, [ 11,19 ] or the addition of oxidizing agents, [ 20 ] (2) via the use of additional energy in conversion such as various wavelengths of UV light, [ 8,15,21 ] or microwaves, [ 22 ] or (3) by employing conditions during annealing that promote effi cient precursor conversion such as ozone or vacuum. [ 6,7,20 ] After the fi rst report on inkjet-printed metal oxide layers from metal chloride precursors by Lee et al. in 2007, [ 16 ] the deposition of metal-oxide semiconductor layers for TFTs has been successfully performed via several printing techniques. [ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes. Also novel combinations of conventional vacuum processes and techniques well known from the fi eld of printing have been proposed to prepare metal-oxide TFTs on fl exible substrates such as inkjet-printed growth inhibitors for the patterning of atomic-layer-deposited (ALD) metal-oxide layers, [ 27 ] and transferring of vacuum-processed functional TFTs from rigid to fl exible substrates by a roll-transfer method. [ 28 ] The previous results clearly indicate the challenges in the processability of materials that need to be overcome to enable large-area electronics fabrication using the industrial high-throughput additive printing processes on fl exible low-cost substrates.In this work, for the fi rst time, the metal-oxide TFT fabrication process was performed on fl exible substrate using process technologies that are roll-to-roll-compatible and industrially...

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“…The atmospheric pressure deposition of both oxide semiconductor and gate dielectric is a challenging and key development milestone in the achievement of simple and cost-effective TFT processes. Avis et al [9] demonstrated high  ZTO TFT with a solution processed ZTO/AlOx gate dielectric stack. However, the spin coating and subsequent hot plate annealing were repeated a number of times in order to have a suitable film thickness for the TFT.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Furuta

Kawaharamura

Wang³

et al. 2012

IEEE Electron Device Lett.

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High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

Cited by 204 publications

References 22 publications

Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

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High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

Cited by 204 publications

References 22 publications

Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate