High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Muliuk, Grigorij; Zhang, Jing; Goyvaerts, Jeroen; Kumari, Sulakshna; Corbett, Brian; Thourhout, Dries Van; Roelkens, Günther

doi:10.1117/12.2507373

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…The optical receiver (Rx) is an indispensable part of optical interconnects, a high-speed, high-sensitivity Rx can improve the performance of the whole link and reduce the requirements of other active and passive key components. Many works have been done to realize a high-performance photodiodes (PDs) on Si [1] , including germanium (Ge) p-i-n PDs [2,3] , Ge traveling-wave PDs [4,5] , heterogeneously integrated III-V p-i-n and uni-traveling carrier (UTC) PDs [6,7] , heteroepitaxy III-V p-i-n and UTC PDs [8,9] , metal-semiconductor-metal (MSM) PDs [10,11] , and two-dimensional materi-als PDs [12,13] . Compared to conventional PDs, avalanche photodiode (APD) exhibits a higher sensitivity due to its internal gain.…”

Section: Introductionmentioning

confidence: 99%

Avalanche photodiodes on silicon photonics

Yuan¹,

Tossoun²,

Huang³

et al. 2022

J. Semicond.

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Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.

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Section: Introductionmentioning

confidence: 99%

Avalanche photodiodes on silicon photonics

Yuan¹,

Tossoun²,

Huang³

et al. 2022

J. Semicond.

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III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

et al. 2019

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Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.

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Hybrid and heterogeneous photonic integration

et al. 2021

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Increasing demand for every faster information throughput is driving the emergence of integrated photonic technology. The traditional silicon platform used for integrated electronics cannot provide all of the functionality required for fully integrated photonic circuits, and thus, the last decade has seen a strong increase in research and development of hybrid and heterogeneous photonic integrated circuits. These approaches have enabled record breaking experimental demonstrations, harnessing the most favorable properties of multiple material platforms, while the robustness and reliability of these technologies are suggesting entirely new approaches for precise mass manufacture of integrated circuits with unprecedented variety and flexibility. This Tutorial provides an overview of the motivation behind the integration of different photonic and material platforms. It reviews common hybrid and heterogeneous integration methods and discusses the advantages and shortcomings. This Tutorial also provides an overview of common photonic elements that are integrated in photonic circuits. Finally, an outlook is provided about the future directions of the hybrid/heterogeneous photonic integrated circuits and their applications.

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High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Cited by 4 publications

References 10 publications

Avalanche photodiodes on silicon photonics

Avalanche photodiodes on silicon photonics

III-V-on-Si photonic integrated circuits realized using micro-transfer-printing

Hybrid and heterogeneous photonic integration

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