Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION&gt;100μA/μm

Loh, Wann Jia; Jeon, Kanghoon; Kang, Chang Yong; Oh, Jungwoo; Liu, Tsu Jae King; Tseng, Hsing Huang; Xiong, Wade; Majhi, P.; Jammy, R.; Hu, Chenming

doi:10.1016/j.sse.2011.06.019

Cited by 18 publications

(5 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work, we have used the Kane model [20] for analyzing BTBT in p-TFET as shown in figure 1(a), along with models for bandgap narrowing, Shockley-Read-Hall (SRH) process [21], concentration and fielddependent mobility with Fermi-Dirac statistics to analyze the performance of devices. Figure 1(b) shows the result of our simulations [22] which agrees reasonably well with the published experimental data for p-TFET with spike anneal process [23]. The parameters values of Kane's Model used in this simulation are bbt.…”

Section: Device Structure and Simulation Setupsupporting

confidence: 84%

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Dwivedi

Singh

2020

Eng. Res. Express

View full text Add to dashboard Cite

In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing metrics of a Dielectric Modulated (DM) p-type Tunnel Field Effect Transistor (p-TFET) based biosensor. The sensing metrics, namely Sensitivity (S) and Selectivity (ΔS) are considerably improved by using a lower value of gate work-function and positive back gate voltages. It is shown that by appropriate selection of gate work-function and back gate bias, Band-to-Band Tunneling (BTBT) of carriers is reduced and a significant change in electrical characteristics is observed in a device with an empty cavity. Therefore, the relative change in the drain current due to the presence of biomolecules in the nanogap cavity is maximized. Results indicate a Sensitivity of ∼10 9 for 3-aminopropyltriethoxysilane (APTES) biomolecule, and Selectivity of ∼10 2 for APTES concerning Biotin biomolecule in an optimally designed p-TFET biosensor. The impact of location, as well as the charge of biomolecules, are also analyzed in this work. Results showcase the additional degree of freedom through device optimization which facilitates the tunability of sensing metrics for improved biosensor performance.

show abstract

Section: Device Structure and Simulation Setupsupporting

confidence: 84%

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Dwivedi

Singh

2020

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

“…Fig. 11 show the benchmark of I on /I off ratio as a function of S.S. min for the present InGaAs [7,8] and Ge/sSOI [6] TFETs against the values in the reported TFETs [12,15,17,19,20,[26][27][28][29][30]. The high I on /I off ratio under low S.S. min of the present Ge/sSOI and InGaAs TFETs has been demonstrated.…”

Section: Benchmark Of Tfetsmentioning

confidence: 72%

“…Ge-source/strained-SOI TFETs have shown I on /I off ratio >10 6 and SS min of 29 mV/dec., because of reduction in effective E g and steep B profiles by in-situ B doping in Ge. and Ge/sSi [6] TFETs against the values in the reported TFETs [12,15,17,19,20,[26][27][28][29][30].…”

Section: Discussionmentioning

confidence: 99%

(Invited) Tunneling FET Technologies Using III-V and Ge Materials

et al. 2015

View full text Add to dashboard Cite

We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/III-V materials. It is found that solid-phase Zn diffusion can realize steep-profile and defect-less p+/n source junctions. We have demonstrated the operation of high Ion/Ioff and low SS planar-type InGaAs tunnel FETs with Zn-diffused source junctions. The small S.S. of 64 mV/dec and large Ion/Ioff ratio over106 has been realized in the planar-type III-V TFETs. It is also shown that tensile strain in Si channels (sSi) combined with the Ge source can enhance the tunneling current because of the reduced effective energy bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high Ion/Ioff ratio over 107 and steep minimum subthreshold slope (SS) of 28 mV/dec.

show abstract

“…The operation of the TFET is analyzed by using 2-D device simulator MEDICI [22] in which the BTBT generation is calculated by the Kane's model [9] which has been experimentally validated in both Si-and SiGe-based tunnel devices [10,24,25] for a wide range of operating temperature [26]. In the Kane's model, the BTBT rate is formulated as:…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

Design Optimization of Extremely Short-Channel Graded Si/Sige Heterojunction Tunnel Field-Effect Transistors for Low Power Applications

Chien

2018

JST

View full text Add to dashboard Cite

This study investigates, by a two-dimensional simulation, the design optimization of a proposed 8 nm tunnel field-effect transistor (TFET) for low standby power (LSTP) applications utilizing graded Si/SiGe heterojunction with device parameters based on the ITRS specifications. The source Ge mole fraction should be designed approximately 0.8 because using lower Ge fractions causes severe short-channel effects while with higher values does not significantly improve the device performance but may create big difficulties in fabrication. Based on simultaneously optimizing the subthreshold swing, on-and off-currents, optimum values of source doping, drain doping and length of the proposed device are approximately 10 20 cm -3 , 10 18 cm -3 , and 10 nm, respectively. The 8 nm graded Si/SiGe TFET with optimized device parameters demonstrates high on-current of 360 µA/µm, low off-current of 0.5 pA/µm, low threshold voltage of 85 mV and very steep subthreshold swing of sub-10 mV/decade. The designed TFET with graded Si/SiGe heterojunction exhibits an excellent performance and makes it an attractive candidate for future LSTP technologies because of its reality to be fabricated with existing FET and SiGe growth techniques.

show abstract

Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm

Cited by 18 publications

References 21 publications

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

(Invited) Tunneling FET Technologies Using III-V and Ge Materials

Design Optimization of Extremely Short-Channel Graded Si/Sige Heterojunction Tunnel Field-Effect Transistors for Low Power Applications

Contact Info

Product

Resources

About