Highly-stable memristive devices with synaptic characteristics based on hydrothermally synthesized MnO2 active layers

Kamble, Girish U.; Takaloo, Ashkan Vakilipour; Teli, Aviraj M.; Kim, Young Jin; Sonar, Prashant; Dongale, Tukaram D.; Kim, Deok Kee; Kim, Tae Whan

doi:10.1016/j.jallcom.2021.159653

Cited by 20 publications

(10 citation statements)

References 42 publications

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“…It is argued that the ideal memristor is hard to realize by experimental ways. 45,46 In this connection, we have calculated the charge−flux property of the Ag/Co x (PO 4 ) 2 /ITO device to validate the fabricated device is either an ideal memristor or a nonideal memristive device. We have used earlier reported methodology for this purpose.…”

Section: Resultsmentioning

confidence: 99%

“…The memristor/memristive device can be recognized with the help of a pinched hysteresis loop in the I – V plane, and the same has been observed for the Ag/Co x (PO 4 ) 2 /ITO device. It is argued that the ideal memristor is hard to realize by experimental ways. , In this connection, we have calculated the charge–flux property of the Ag/Co x (PO 4 ) 2 /ITO device to validate the fabricated device is either an ideal memristor or a nonideal memristive device. We have used earlier reported methodology for this purpose .…”

Section: Resultsmentioning

confidence: 99%

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Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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The rise of artificial intelligence and machine learning demands versatile electronic devices for memory and braininspired computing applications. The electronic materials are the backbones of these applications. Considering this, a functional Co x (PO 4 ) 2 nanomaterial was synthesized for resistive memory and neuromorphic computing applications. The synthesized nanomaterial was well characterized by using X-ray diffraction, Fourier transform infrared spectroscopy, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The fabricated Ag/Co x (PO 4 ) 2 /ITO device shows bipolar resistive switching and memristive properties. The SET and RESET voltages were analyzed by using different statistical measures, and their distribution was studied by using the Weibull technique. The results suggested that the SET voltages were more uniformly distributed than the RESET voltage. The switching nonlinearity was modeled and predicted by using Holt's exponential smoothingbased statistical time series analysis method. In the case of nonvolatile memory tests, the device shows good endurance (10 3 cycles) and memory retention (3 × 10 4 s) with excellent memory window (1.7 × 10 3 ) properties. Moreover, the device can mimic the potentiation−depression and spike-timing-dependent plasticity-based Hebbian learning rules, suggesting Co x (PO 4 ) 2 is a potential nanomaterial for the fabrication of artificial synapse. The detailed analysis of electrical results suggested that the space-charge-limited current-based charge transport was responsible for the device conduction, whereas the formation and rupture of conductive filament(s) were responsible for the resistive switching in the Ag/Co x (PO 4 ) 2 /ITO memristive device. The results of the present investigation suggested that the Co x (PO 4 ) 2 nanomaterial is a potential candidate for resistive memory and brain-inspired computing applications

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Katkar

Padalkar

Kumbhar

et al. 2022

ACS Appl. Electron. Mater.

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“…For instance, Kamble et al hydrothermally synthesized MnO 2 and showed the coexistence of homogeneous and filamentary mechanisms in the thin film-based device. These results are advantageous for the making of a good quality RS device for nonvolatile memory and electronic synaptic devices. , Xiao et al have synthesized TiO 2 nanowire networks grown using the hydrothermal method . More et al have fabricated a gallium-doped zinc oxide RS device and explored its synaptic properties …”

Section: Synthesis and Deposition Methods For Rs Devicesmentioning

confidence: 99%

“…These results are advantageous for the making of a good quality RS device for nonvolatile memory and electronic synaptic devices. 211,212 Xiao et al have synthesized TiO 2 nanowire networks grown using the hydro- thermal method. 213 More et al have fabricated a gallium-doped zinc oxide RS device and explored its synaptic properties.…”

Section: Synthesis and Deposition Methods For Rs Devicesmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

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“…Volatile/non-volatile bifunctional memristors with one or two functions have been studied, as shown in Table 1. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] However, versatile memristors covering multiple functions, such as non-volatile memory, selectors, artificial neurons, and artificial synapses have not been investigated. It is difficult to guarantee large storage windows (both volatile and non-volatile models), excellent endurance, and multiple functions simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Versatile memristor for memory and neuromorphic computing

et al. 2022

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Highly-stable memristive devices with synaptic characteristics based on hydrothermally synthesized MnO2 active layers

Cited by 20 publications

References 42 publications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Versatile memristor for memory and neuromorphic computing

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