Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis

Abstract

The hot carrier light emission in SOI-MOSFET's is analyzed by using a newly developed two-dimensional device simulator. A new calculation algorithm of coupled Monte Carlo-energy transport analysis is employed to obtain the spatial carrier temperature distribution and the carrier energy distribution at the fast computation turnaround time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show the excellent agreements with the experimental results. It is found from the comparison between the simulation results and the experimental ones that the hot carrier energy distribution is not described by the Maxwell-Boltzmann distribution.