Hot electrons and negative resistance at 20°K In n-type germanium containing Au− centres

Ridley, B. K.; Pratt, Rob

doi:10.1016/0022-3697(65)90068-5

Cited by 94 publications

(21 citation statements)

References 2 publications

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“…At low carrier temperatures, the traps would be ineffective, but, as the carrier temperature is rasied, the rate of trapping can increase sufficiently, rapidly to create voltage-controlled differential negative resistance. This interpretation corresponds to the theoretical treatment of the negative resistance with Au doped Ge by Ridley & Pratt [8]. The relationship between the negative resistance, and defect is still under investigation in our Drexel lab.…”

Section: Methodssupporting

confidence: 63%

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

1992

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Al was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good Nshape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

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Section: Methodssupporting

confidence: 63%

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

1992

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“…Tr~ It is obvious that u~0 n) does ~g not show such a temperature dependence. On the other hand, the order of magnitude of u0 (m is different from that of the measured velocity for Au = centres in Ge at about 30 ~ [18], [19], [24]. The same is true for u~o n~ In raer, iu~oH}I --0.2 cmsec-1; ltt(lll) l = 2.…”

Section: Conclusion and Comparison With Experimentsmentioning

confidence: 65%

“…(28) for r = 1), rr,, = 10 -~ see; T. = 1 see; y = 2. The parameters of recombination centres refer to Au = at about 30~ [18],~ [19], [24]. The value of 7 is correct both for Au = and Cu = centres [22].…”

Section: Approximate Expressions For J~ and U Omentioning

confidence: 99%

“…It seems that the conditions for the onset of instability can be calculated correctly from linear theory, but this is not the case for domain velocity and current, though, since the first observations of current oscillations [12--17], new and more precise experimental data on recombination instability are available [18]-- [24]. The discrepancy between experiment and theory is related to the fact that the steadily travelling domains cannot be considered as a small perturbation and, on the other hand, in the dynamics of slowly moving domains, the domain shape which is only partly taken into account in existing nonlinear theories, plays a non-negligible role.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Velocity and current determination for steadily travelling domains in semiconductors. I

Pataki

1968

Acta Physica

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An algebraic equation system for the determination of domain velocity (u0) and total current (Js) is derived, in terms of parameters, characterizing the domain shape around the neutrality point (domain shape parameters). For the reeombination model considered, the equation system led to an algebraie equation of fourth degree for u 0 alone. It is shown that the domain shape plays a basic role in the dynamics of slow domains; the experimental data (eoncerning Au = centers in Ge) could be explained only if a non-symmetrical domain shape was assumed.

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“…16 The NDR in our model of the p-type Ge system arises from negative differential carrier concentration due to the generation and recombination dynamics of holes from shallow acceptor impurities. Instabilities arising from negative differential carrier concentration have also been reported for GaAs, 4 InSb, 17 and Si. 18 We find that the NDR in our model arises from a negative differential impact-ionization rate and is only present in closely compensated samples.…”

Section: Introductionmentioning

confidence: 89%

Solitary-wave conduction inp-type Ge under time-dependent voltage bias

et al. 1996

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We present the results of numerical simulations of a drift-diffusion model-including electric-fielddependent generation-recombination processes-for closely compensated p-type Ge at low temperature and under dcϩac and dcϩnoise voltage biases, with an Ohmic boundary condition. We observe frequency locking and quasiperiodicity under dcϩac bias, but do not find chaotic behavior for a uniform impurity profile. Noise-induced intermittent switching near the onset of solitary-wave conduction is compared to experimentally observed intermittency, type-III intermittency, and on-off intermittency. For a linearly increasing acceptor concentration, we find that the size of the solitary waves diminishes as they advance across the sample.FIG. 1. The homogeneous stationary current density j sh (E) for ␣ϭ1.21, illustrating the NDR in our model.

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Hot electrons and negative resistance at 20°K In n-type germanium containing Au− centres

Cited by 94 publications

References 2 publications

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

Velocity and current determination for steadily travelling domains in semiconductors. I

Solitary-wave conduction inp-type Ge under time-dependent voltage bias

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