Ideal Graphene/Silicon Schottky Junction Diodes

Sinha, Durganand; Lee, Ji Ung

doi:10.1021/nl501735k

Cited by 230 publications

(251 citation statements)

References 36 publications

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“…2. At 310 K. The calculated ϕ bo decreases with increasing reverse-bias for all junctions, similar to a previous work on Gr/Si Schottky junctions 18 , with the Gr/GaAs junction showing a lower barrier and larger variation.…”

supporting

confidence: 88%

“…A modified TE model assuming a Gaussian distribution of the barrier height offers a better account of carrier transport in these graphene/semiconductor Schottky junctions 16,17 . For near ideal Gr/Si junction, Landauer transport mechanism is suggested 18 . Under reverse-bias, on the other hand, these Schottky diodes can exhibit much improved performance for gas sensing compared to field effect devices, primarily due to the exponential dependence of the reverse current on the Schottky barrier height (SBH) 9 .…”

mentioning

confidence: 99%

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Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Tomer

Rajput

Hudy

et al. 2015

Applied Physics Letters

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Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions under reverse-bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing reverse-bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields.

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supporting

confidence: 88%

mentioning

confidence: 99%

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Tomer

Rajput

Hudy

et al. 2015

Applied Physics Letters

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“…Next, the current density is calculated using the thermionic-emission model [17]: Richardson constant extracted for a conventional metal/semiconductor Schottky diode [20,21] and we believe that such a reduction is due to the low density of states of graphene electrode [22]. Note that a similar thickness dependence whereby the ON-OFF ratio is lower for a thinner TMD layer in a vertical heterostructure has been reported for graphene/MoS 2 /metal vertical heterostructures [3,4,18].…”

mentioning

confidence: 93%

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Sata

Moriya

Morikawa

et al. 2015

Applied Physics Letters

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We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications. *E-mail: moriyar@iis.u-tokyo.ac.jp; tmachida@iis.u-tokyo.ac.jp 2 Heterostructures that are held together by the van der Waals (vdW) force between the layered materials have been the subject of considerable interest in the fields of materials science and opto-electronics [1]. To date, several layered materials have been developed and extensively studied. Such materials include graphene, black phosphorous, transition metal dichalcogenides (TMD), and hexagonal boron nitride. Among these materials, heterostructures based on graphene and TMD have been found to exhibit functions that were previously not possible, including those of a vertical field-effect transistor [2][3][4][5], photocurrent generation [6,7], a spin-orbit proximity effect [8], and the ability to fabricate flexible devices [9]. Particularly, vertical field-effect transistors based on graphene/MoS 2 /metal heterostructures have been the subject of considerable attention mainly due to their large current ON-OFF ratio (10 3 to 10 5 ) combined with a large ON current density (>10 3 A/cm 2 ) [3,4]. This level of performance would attract very high demand for electronics applications. Given that the large current ON-OFF ratio is a result of the electric field modulation of the Schottky barrier height at the graphene/MoS 2 interface, the precise tuning of the band alignment at the graphene/TMD interface is crucial in determining the level of performance. To date, such devices have been fabricated using MoS 2 which has an indirect band gap of around 1.3 eV in its bulk form [10]. Changing the chalcogen atom from sulfur to selenium significantly reduces the band gap (the indirect gap of MoSe 2 is around 1.1 eV) [11] and also changes the electron affinity [12,13]. Furthermore, MoSe 2 exhibits better optical properties than MoS 2 [11,14].These results point to MoSe 2 being the better option for opto-electronics applications. In addition, since MoSe 2 has a smaller electron affinity than MoS 2 , under the assumption of Schottky-Mott rule, the Schottky barrier height at graphene/MoSe 2 interface is expected 3 to be larger than that of graphene/MoS 2 . Therefore a comparison of the Schottky barrier property of different TMD materials provides an insight into the vdW interface properties of a graphene/TMD heterostructure. In this study, we fabricated a graphene/MoSe 2 /Ti vertical...

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“…To overcome the disadvantages caused by the gapless band in graphene, intensive efforts have been strived, such as chemical doping, topography control, etc 19, 20, 21. Unfortunately, only very limited success has been achieved 20, 22, 23, 24. Consequently, uncovering other layered materials with bandgap is urgent.…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Ideal Graphene/Silicon Schottky Junction Diodes

Cited by 230 publications

References 36 publications

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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