Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

DiLello, Nicole; Hoyt, Judy L.

doi:10.1063/1.3615800

Cited by 6 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SLG integration reduces the complexity and the number of steps compared with 3D device integration [60,251], as well as the total temperature budget to integrate the active detector or modulator on the Si waveguides. A reduced temperature budget decreases the threat to the integrity of the devices processed earlier on the exposed wafer [252][253][254] and allows for flexible hetero-integration. The ease of integration of SLG devices with Si, as well as the reduced footprint of the SLG devices, should afford photonics technology increased cost-effectiveness compared with the competing semiconductor solutions.…”

Section: Wafer-scale Integrationmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

View full text Add to dashboard Cite

Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

show abstract

Section: Wafer-scale Integrationmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

View full text Add to dashboard Cite

show abstract

“…These dislocations acts as effective electrical traps and generation centers in the depletion region [10,11]. In addition, the generation of minority carriers on the Ge layer surface due to the poor passivation quality of silicon dioxide is another important dark current source [12,13], especially for the small-size Ge (< 10  10 m 2 ) VPIN GePDs, which have a large perimeter to surface area ratio. In order to further reduce the dark current of a VPIN GePD, it is important to know the dark current generation mechanisms, such that specific process and/or epitaxy development can be done to optimize the corresponding aspect of the material quality.…”

Section: Introductionmentioning

confidence: 99%

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

Chen

Verheyen

Heyn

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, surface leakage current and bulk leakage current were separated, and their activation energies were extracted. Surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and (reverse bias) voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling.

show abstract

“…Post metal annealing (PMA) is a well-known treatment used to improve the interfacial properties of materials, which aims at reducing the interface traps between the substrate and a dielectric. [1][2][3] PMA has been applied not only in the enhancement of transistors, but also for other devices that can benefit from an improvement in interface characteristics; in fact, PMA improves the mobility of surface-bound electrons, which immediately leads to an improvement in the performance of semiconductor devices. [4][5][6][7] In these regards, research has been actively conducted to investigate the application of PMA to metal-oxide-semiconductor field-effect transistors (MOSFETs).…”

Section: Introductionmentioning

confidence: 99%

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Song

Babu

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Many attempts have been made to improve the performance of tunneling field-effect transistors (TFETs). Among these, post metal annealing (PMA) can induce enhanced device performance, but its application to TFETs has not been sufficiently explored. In this study, the temperature, time, atmosphere, and pressure conditions for the PMA of a TFET device are optimized. To evaluate if any loss in performance occurred after PMA, we tested the transistors' electrical parameters, specifically their subthreshold slopes and low-frequency noises at 10 Hz. Moreover, the interface trap charge density of the TFETs is extracted as a measure to evaluate their performance. As a result, lower temperatures and shorter PMA times are essential compromises, and the performances were improved under H 2 and D 2 -containing atmospheres. Furthermore, the benefit of having high gas pressures during PMA is noted, because as the number of hydrogen/deuterium atoms increases, more traps-removing surface-gas interactions can occur.

show abstract

Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide

Cited by 6 publications

References 19 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

Experimental optimization of post metal annealing on fully depleted-silicon on insulator tunneling field effect transistor

Contact Info

Product

Resources

About