2013
DOI: 10.1063/1.4813859
|View full text |Cite
|
Sign up to set email alerts
|

Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure

Abstract: Articles you may be interested inEffect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
25
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
7
1
1

Relationship

0
9

Authors

Journals

citations
Cited by 47 publications
(27 citation statements)
references
References 21 publications
2
25
0
Order By: Relevance
“…Particularly, high Al mole fraction Al x Ga 1À x N (x450%) alloys can be used for deep ultraviolet light-emitting diodes (LED), detectors and lasers [2], which are targeted for a wide range of potential applications, such as water purification, sterilization, biological detection, medical treatment and high density optical recording [3][4][5][6]. To make these kinds of devices, intentional n-type doping is essential to control the electrical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Particularly, high Al mole fraction Al x Ga 1À x N (x450%) alloys can be used for deep ultraviolet light-emitting diodes (LED), detectors and lasers [2], which are targeted for a wide range of potential applications, such as water purification, sterilization, biological detection, medical treatment and high density optical recording [3][4][5][6]. To make these kinds of devices, intentional n-type doping is essential to control the electrical properties.…”
Section: Introductionmentioning
confidence: 99%
“…It was estimated that the CIE of the 250 nm LED improved from about 20% to above 80% by using the MQB [20]. Similarly, AlxGa1-xN/Al0.7Ga0.3N electron blocking heterostructures (EBHs) were investigated to enhance the injection efficiency by Kolbe et al [14] The output power of 290 nm LEDs with an optimized AlN/Al0.7Ga0.3N EBH increased by a factor of around 8.5 compared to LEDs with a conventional Al0.7Ga0.3N EBL. Reprinted with permission from [17].…”
Section: Device Design For Improved Performance Of Group Iii-nitride mentioning
confidence: 99%
“…It was estimated that the CIE of the 250 nm LED improved from about 20% to above 80% by using the MQB. [20] Similarly, AlxGa1-xN/Al0.7Ga0.3N electron blocking heterostructures (EBHs) have been investigated to enhance the injection efficiency by Kolbe et al [14] The output power of 290 nm LEDs with an optimized AlN/Al0.7Ga0.3N EBH increased by a factor of around 8.5 compared to LEDs with a conventional Al0.7Ga0.3N EBL. Sidewall emission-enhanced (SEE) DUV LEDs with multiple light-emitting mesa stripes and three-dimensional reflectors between the stripes have been explored to enhance the light extraction efficiency of TM polarized light.…”
Section: Device Design For Improved Performance Of Group Iii-nitrde Dmentioning
confidence: 99%
“…Reported external quantum efficiencies (EQE) for group III-nitrides-based near and deep UV LEDs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In part courtesy of Prof. M. Kneissl of Technische Universität Berlin.…”
Section: Current Status and Challenges Of Group Iii-nitrde Duv Ledsmentioning
confidence: 99%