Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer

Abstract

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant Appl. Phys. Lett. 96, 142110 (2010); 10.1063/1.3384999 Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain J.Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors Appl. Phys. Lett. 93, 192115 (2008); 10.1063/1.3028025Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n -channel metal-oxide-semiconductor field effect transistor applicationsThe superior characteristics of the fluorinated HfO 2 / SiON gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass ͑FSG͒ passivation layer to form fluorinated HfO 2 / SiON dielectric. Fluorine incorporation has been proved to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO 2 / SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectric applications.

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

“…The conductivity increases from 0.78 (with FH) to 131 mS cm −1 (with the low amount of Cl − ), and to 300 mS cm −1 (with the high amount of Cl − ) due to optimization of the surface passivation. No significant current saturation can be observed for the Cl − passivated samples, which manifests charge transports with lower scattering . A comparison (Figure D) clearly shows the improvements in the conductivity and the linearity of the current, when Cl − passivation is used or when more Cl − ions are provided to the crystal.…”

“…Figure A shows the output characteristics of these stripes. The current is linearly proportional to the voltage without being saturated, which is a sign for the formation of Ohmic contacts (linearity in the low voltage regime) and for the successful surface passivation (no scattering at higher voltages) . The conductivity of these crystals is up to 1916 mS cm −1 .…”

“…By increasing the bias voltage, a clear saturation is observable for the current. This can be attributed to the saturation of the carriers drift velocity in higher electric fields and is due to the relatively high level of scattering during charge transport . By using Cl − ions, the samples conduct more currents (Figure B).…”

Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

“…Appropriate fluorine incorporation can passivate the SiO 2 /Si interface, leading to the smallest D it for the LF-ZrO sample. 9 However, owing to the high electronegativity of fluorine, excessive fluorine can distort and even cleave the Si-Si bonds at the interface to form dangling Si bonds and Si-F bonds (as demonstrated in Fig. 2), 17,18 resulting in the highest D it and thus the largest window for the HF-ZrO sample.…”

“…5 Besides nitrogen, fluorine is also an excellent passivant to remove oxide defects and strengthen the dielectric films due to its very high electronegativity. 9 Therefore, fluorination is an effective way to improve the charge-trapping characteristics of dielectrics. 7,8 In this work, based on MONOS capacitors, the charge-trapping characteristics of ZrO 2 with and without fluorine incorporation are studied.…”