In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500°C

The crystallization and dielectric tunability of Zn doped Na0.5Bi0.5TiO3 thin films

“…Whereas, when the frequency is above 100 kHz, the defect dipole inertia plays a primary role [22]. This phenomenon has been observed in other ferroelectric films [23,24]. It is worth noting that the NBTZn 0.01 thin film shows relatively higher ε r of 341 and lower tanδ of 0.06 at 100 kHz, indicating less concentration of defects as well as the better crystallization degree in the NBTZn 0.01 thin film.…”

Energy Storage Characteristics of BiFeO3/BaTiO3 Bi-Layers Integrated on Si

“…A tiny amount of (110)-oriented BaTiO 3 grains and (100)-oriented tetragonal BiFeO 3 grains were detected, which can be attributed to the moderate growth temperature and the effect of residual stress [15,16]. In our previous work [17], it was revealed that a highly (00 l )-oriented BaTiO 3 thin film can be grown on Pt/Ti/SiO 2 /(100) Si substrate by using a LaNiO 3 buffer layer at 500 °C.…”

“…Figure 3 a shows the XRD 2 θ scan spectrum of the BiFeO 3 /BaTiO 3 bilayer film grown on LaNiO 3 /Pt/Ti/SiO 2 /(100) Si, which is dominated by the preferred (00 l ) diffraction peaks of the bulk perovskite structures and does not show any crystalline impurities or secondary phases. A tiny amount of (110)-oriented BaTiO 3 grains and (100)-oriented tetragonal BiFeO 3 grains were detected, which can be attributed to the moderate growth temperature and the effect of residual stress [ 15 , 16 ]. In our previous work [ 17 ], it was revealed that a highly (00 l )-oriented BaTiO 3 thin film can be grown on Pt/Ti/SiO 2 /(100) Si substrate by using a LaNiO 3 buffer layer at 500 °C.…”

Microstructure and Properties of BaTiO3 Ferroelectric Films Prepared by DC Micro Arc Oxidation

“…The dielectric property of the film under the optimized solution composition was better than that of BaTiO 3 films prepared by atmospheric‐pressure MOCVD and spin casting . Compared to the films prepared by rf magnetron sputtering, the dielectric constant was small, but the dielectric loss was similar. In Ref.…”

“…In Ref. , it was indicated that the film dielectric content decreased from ∼720 to ∼360 when the frequency was increased from 1 kHz to 1 MHz, and tan δ varied between 0.042 and 0.034 in the same frequency range.…”