Influence of postdeposition annealing on the structural and optical properties of cosputtered Mn doped ZnO thin films

Abstract

The influence of postgrowth annealing on the structural and optical properties of rf cosputtered Mn doped ZnO thin films deposited on glass substrate at room temperature has been investigated. All as deposited Zn1−xMnxO films are highly textured, with the c axis of the wurtzite structure along the growth direction. The as grown films are in a state of compressive stress and a reduction in stress with postgrowth annealing treatment are observed. The band gap of Mn doped ZnO films (3.34eV) is slightly larger than the pure ZnO film (3.30eV) and is found to decrease with an increase in annealing temperature for all the samples. The optical dispersion of refractive index with photon energy in Zn1−xMnxO films with varying x and different annealing temperature is studied in the light of single oscillator and Pikhtin-Yas’kov [Sov. Phys. Semicond. 15, 81 (1981)] model, respectively.

Structural, optical and magnetic properties of Zn1−xMnxO micro-rod arrays synthesized by spray pyrolysis method

“…increasing with increasing Mn content in ZnO films was also reported in the literature [37,38] and we comment further below on this apparently contradictory results.…”

“…The dominant UV peak seen in all the samples is located at 3.361 eV and is ascribed to the near band edge emission of excitons bound to donors (D 0 X, members of the so-called I line series) [39]. The energies of as mentioned above [34][35][36][37][38]. For all these reasons we judge the conclusion from the low temperature PL data above, i.e.…”

Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

“…As for the redshift of the band gap for the ZnO films, some researchers believed that it was associated with the relaxing of compressive stress. Because of the large lattice mismatch between ZnO and Al 2 O 3 , ZnO films grown on Al 2 O 3 always contain large quantity dislocation and tend to exhibit intensive compress stress [26,27]. The band gap due to strain-induced confinement displayed a redshift that increases with etching time, this may be because of the strain relaxation along the dislocation and grain boundary [28,29].…”

Doping and annealing effects on ZnO:Cd thin films by sol–gel method

“…Many groups reported the influence of annealing temperature on the structural property of ZnO thin films. They thought the improvement of crystallinity was due to the relief of the stress as annealing temperature increases [33][34][35]. The stress is composed of a thermal stress and an intrinsic stress.…”