Infrared and Raman spectroscopy of particle-beam induced damage of silicon carbide

Luminescence properties of spark-processed SiC

“…The Raman spectrum of single crystalline Si is also presented in the figure as a dotted line. The Raman spectrum of 6H SiC displays vibrational modes related to transverse optical (TO) modes of the SiC lattice [16,17]. The observed TO vibrational modes of 6H SiC are 765 and 788 cm À 1 and are almost identical to the reported value [17].…”

“…The Raman spectrum of 6H SiC displays vibrational modes related to transverse optical (TO) modes of the SiC lattice [16,17]. The observed TO vibrational modes of 6H SiC are 765 and 788 cm À 1 and are almost identical to the reported value [17]. It is interesting to note that Raman spectrum of sp-SiC exhibits no vibrational mode related to 6H SiC.…”

“…8. The infrared spectrum of 6H SiC is dominated by the reststrahl band between 790 and 970 cm À 1 , which is caused by the strong E lt oscillator at 796 cm À 1 [17,21]. Small IR bands between 1400 and 1600 cm À 1 are not observed under these conditions [22].…”

Optical and structural properties of 6H–SiC irradiated by coimplantation

“…The low wavenumber rising edge close to transverse optical frequency (798 cm À1 ) and high wavenumber falling edge close to longitudinal optical frequency (970 cm À1 ) are characteristic of the reststrahlen band of 6H-SiC. The appearance of an interference oscillation is observed after He + irradiation, which is in good agreement with Hobert et al [31]. Fig.…”

Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

“…[12] Raman spectra (line intensities, shifts, and bandwidths) can provide information about the polytype of SiC, the disorder or damage, impurities, lattice strain, free carrier density and mobility, as well as details concerning the composition and the chemical structure of the damaged layers. [3,[13][14][15][16][17][18] In this work, we have studied the distribution of damage induced in 6H-SiC wafers by irradiation with various doses of 4-MeV carbon and silicon ions in channeling orientation using Raman spectroscopy in connection with scanning electron microscopy (SEM) characterization. The results of the optical measurements are compared with a modified phonon confinement model that incorporates the intensity variation at the laser spot to deal with the inhomogeneous variation of the lattice distortions inside the crystal from the ion irradiation.…”