Injection Photovoltage in Thin Anodic TiO2 Layers

Кытин, В. Г.; Duzhko, Volodimyr V.; Timoshenko, V.Yu.; Rappich, J.; Dittrich, Th.

doi:10.1002/1521-396x(200106)185:2<r1::aid-pssa99991>3.0.co;2-u

Cited by 8 publications

(6 citation statements)

References 9 publications

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“…These transients showed decays typical for the so-called tunneling controlled recombination. 2,14 In this case the excess charge carriers were separated in space but they could recombine with each other due an overlap of the wave functions of separated electrons and holes. The similar tunneling controlled mechanism is present for the recombination of separated charge trapped at surface states.…”

Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

“…The similar tunneling controlled mechanism is present for the recombination of separated charge trapped at surface states. 14 For the CdS layer deposited by ten dip cycles, the shapes of the SPV transients depended strongly on the intensity of the laser pulse. The pulses became shorter with increasing intensity.…”

Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

“…Recombination was controlled by the concentrations of excess electrons and holes in the conduction and valence bands depending on their diffusion. 9,14 The recombination rate was high at short times when the excess carrier concentrations were still high but recombination became slower with decreasing excess carrier concentration.…”

Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

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High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

Dittrich

Bönisch

Zabel

et al. 2008

Review of Scientific Instruments

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Time-resolved surface photovoltage (SPV) is an important method for studying charge separation, for example, in nanostructured semiconductors. High precision differential measurement of SPV transients was realized with two identical measurement capacitors and high-impedance buffers. In addition, logarithmic readout and averaging procedures were implemented for single transients over eight magnitudes in time. As a model system ultrathin CdS layers were investigated. The thickness dependencies of the SPV amplitudes and that of the dominating relaxation mechanisms are demonstrated and discussed.

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Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

Section: Relaxation Mechanisms Of the Charge Separated In Spacementioning

confidence: 99%

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High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

Dittrich

Bönisch

Zabel

et al. 2008

Review of Scientific Instruments

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“…This may occur because at such high exci-tation intensities the wave functions of the photogenerated carriers, confined to 2D GaInNAs overlap very strongly. 29 Another possibility is the band filling when the material becomes transparent to the incident radiation at such high excitation intensities. 30…”

Section: Excitation Intensity Dependence Of Ipvmentioning

confidence: 99%

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

Mazzucato

Balkan

Teke

et al. 2003

Journal of Applied Physics

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Articles you may be interested inStructural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers Photoluminescence microscopy imaging of tensile strained In 1−x Ga x As y P 1−y / InP quantum wells grown by low-pressure metalorganic vapor phase epitaxyWe have investigated in-plane photovoltage ͑IPV͒ and photoluminescence ͑PL͒ in sequentially grown Ga 0.8 In 0.2 As/GaAs and Ga 0.8 In 0.2 N 0.015 As 0.985 /GaAs quantum wells. Temperature, excitation intensity, spectral and time dependent study of the IPV, arising from Fermi level fluctuations along the layers of the double quantum well structure, gives valuable information about the nonradiative centers and hence about the optical quality of the GaInNAs quantum well. It also provides information about the radiative transition energies in all the layers. In order to obtain either the trap activation energies and the detrapping rates of photogenerated carriers in the GaInNAs the IPV results are analyzed in terms of a theoretical model based on random doping fluctuations in nominally undoped multilayer structures. The PL results are analyzed in terms of the band anticrossing model to obtain the electron effective mass from the coupling parameter C NM .

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“…A logarithmic decay is close to relaxation limited by distant dependent tunneling recombination. 27 Furthermore, an additional positive component increasing in time by a (stretched) logistic growth (C 2 (t)) was needed for fitting the SPV transient for TTIP: AcacH = 1:20. In general, SPV signals can grow in time, for example, due to diffusion.…”

Section: Transient Analysis and Correlation Of Backmentioning

confidence: 99%

Synthesis Control of Charge Separation at Anatase TiO₂ Thin Films Studied by Transient Surface Photovoltage Spectroscopy

Dittrich

Sydorenko

Spalatu

et al. 2022

ACS Appl. Mater. Interfaces

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For the efficient photocatalytic oxidation of organic pollutants at surfaces of semiconductors, photogenerated holes shall be separated toward the surface and transferred to reactive surface sites, whereas the transfer of photogenerated electrons toward the surface shall be minimized. In this Research Article, the identification of suitable synthesis control of charge separation combined with an in-depth understanding of charge kinetics and trapping passivation mechanisms at the related surfaces can provide tremendous opportunities for boosting the photocatalytic performance. In this work, a comprehensive transient surface photovoltage spectroscopy study of charge separation at anatase TiO 2 thin films, synthesized by ultrasonic spray pyrolysis from titanium(IV) isopropoxide (TTIP)−acetylacetone (AcacH) based precursor is reported. By varying the amount of AcacH in the precursor solution, an experimental approach of synthesis control of the charge transfer toward TiO 2 surface is provided for the first time. An increased amount of AcacH in the precursor promotes transition from preferential fast electron to preferential fast hole transfer toward anatase surface, correlating with a strong increase of the photocatalytic decomposition rate of organic pollutants. Suitable mechanisms of AcacH-induced passivation of electron traps at TiO 2 surfaces are analyzed, providing a new degree of freedom for tailoring the properties of photocatalytic systems.

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Injection Photovoltage in Thin Anodic TiO2 Layers

Cited by 8 publications

References 9 publications

High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

Synthesis Control of Charge Separation at Anatase TiO₂ Thin Films Studied by Transient Surface Photovoltage Spectroscopy

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Injection Photovoltage in Thin Anodic TiO2 Layers

Cited by 8 publications

References 9 publications

High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

High precision differential measurement of surface photovoltage transients on ultrathin CdS layers

In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells

Synthesis Control of Charge Separation at Anatase TiO2 Thin Films Studied by Transient Surface Photovoltage Spectroscopy

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Synthesis Control of Charge Separation at Anatase TiO₂ Thin Films Studied by Transient Surface Photovoltage Spectroscopy