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Time-resolved surface photovoltage (SPV) is an important method for studying charge separation, for example, in nanostructured semiconductors. High precision differential measurement of SPV transients was realized with two identical measurement capacitors and high-impedance buffers. In addition, logarithmic readout and averaging procedures were implemented for single transients over eight magnitudes in time. As a model system ultrathin CdS layers were investigated. The thickness dependencies of the SPV amplitudes and that of the dominating relaxation mechanisms are demonstrated and discussed.

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The measurement of surface photovoltage (SPV) transients over 12 orders of magnitude in time was recently demonstrated [Rev. Sci. Instrum. 88, 053904 (2017)]. In dedicated experiments, however, a high-impedance buffer shall be placed outside the measurement chamber, which has consequences for SPV measurements at very short times. By varying the LCR circuit of a measurement configuration, applying a multi-parameter fit and simulating the corresponding SPV transients, we show, on the examples of highly doped silicon and a CdS thin film, that the source function of SPV transients can be reconstructed with a resolution time better than 1 ns.