Proceedings of the 1999 International Symposium on Physical Design 1999
DOI: 10.1145/299996.300020
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Interconnect coupling noise in CMOS VLSI circuits

Abstract: Abstmct-Interconnect between a CMOS driver and receiver can be modeled as a lossy transmission line in high speed CMOS VLSI circuits as transition times become comparable to or lass than the time of flight delay of the signal through the low resistivity interconnect.In this paper, closed form expressions for the coupling noise between adjacent interconnect are presented to estimate the coupling noise voltage on a quiet line. These expressions are based on an assumption that the interconnections are loosely cou… Show more

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Cited by 30 publications
(9 citation statements)
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“…Intra-chip interconnect coupling (capacitive and inductive coupling) is also significant in current single processors that form the multi-core system at the recent operating frequency of high performance processors [16], [17]. Although operating frequency in multi-core processor is being kept low (maximum that can be made without increasing power dissipation to threshold point), signal latency and signal distortion are still a major concern for the proper functioning of individual processors at this frequency range.…”
Section: Processormentioning
confidence: 99%
“…Intra-chip interconnect coupling (capacitive and inductive coupling) is also significant in current single processors that form the multi-core system at the recent operating frequency of high performance processors [16], [17]. Although operating frequency in multi-core processor is being kept low (maximum that can be made without increasing power dissipation to threshold point), signal latency and signal distortion are still a major concern for the proper functioning of individual processors at this frequency range.…”
Section: Processormentioning
confidence: 99%
“…Interconnect crosscapacitance noise is due to the charge injected into quiet/silent nets because of switching in neighboring nets through the coupling capacitance between them. The charge injected increases prominently in the deep submicron regime due to the increased coupling capacitance between adjacent nets causing reliability issues [Tang and Friedman 1999]. The noise due to coupling capacitance is the dominant component among noise sources and is a major concern in deep submicron design [Shanbhag et al 2000].…”
Section: Introductionmentioning
confidence: 99%
“…Due to faster clock rate, the effect of inductance is going to be more pronounced in future technologies. Inductive and capacitive coupling make interconnect coupling noise significant [13]. Coupling noise between adjacent interconnects can cause disastrous effects on the logical functionality and long-term reliability of a VLSI circuit as well as complicate timing analysis.…”
Section: Introductionmentioning
confidence: 99%