Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer

The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes

“…In general a thin n + a-Si:H layer is sandwiched between the metal and a-Si:H layers to make the contact ohmic [1]. But this process is an extra undesired step therefore electrical properties of variety of metal/ a-Si:H ohmic contacts were investigated by researchers [2,3]. For example, Sb is sandwiched between the metal and a-Si:H as a thin layer instead of n + a-Si:H layer [4].…”