Laser Fabrication of Ship-in-a-bottle Microstructures in Sapphire

Matsuo, Shigeki; Shichijo, Y.; Tomita, Takuro; Hashimoto, Shuichi

doi:10.2961/jlmn.2007.02.0001

Cited by 16 publications

(5 citation statements)

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“…For SEM observation of the subsurface irradiated region, the sample was mechanically polished so that the region was observable directly. The direct SEM observation of the irradiated region is important because nondestructive optical observation alone might be insufficient to reveal the residue [14].…”

Section: Methodsmentioning

confidence: 99%

“…However, we have reported that complete removal of the volume region is difficult. Mesh-like residue remains after etching [14]. Volume etching is necessary for applications that require a complete hollow space, such as embedded optical components [15,16], nanoaquariums for dynamic observation of living cells [17], and fluid mixing by optical rotators [18].…”

Section: Introductionmentioning

confidence: 99%

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Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

et al. 2008

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We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

et al. 2008

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“…Matsuo et al. inscribed an optical rotator using fs pulses with a central wavelength of 800 nm from a regeneratively amplified Ti:Sapphire source (Spitfire, Spectra Physics). Pulses with energy 45 nJ were focused at a depth of 10 μm from the surface using a 1.35 NA objective.…”

Section: Selective Etchingmentioning

confidence: 99%

Ultrafast laser inscription: perspectives on future integrated applications

Choudhury

MacDonald

Kar

2014

Laser & Photonics Reviews

171

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This paper reviews the recent advancements achieved using ultrafast laser inscription (ULI) that highlight the cross-disciplinary potential of the technology. An overview of waveguide fabrication is provided and the three distinct types of waveguide cross-section architectures that have so far been fabricated in transparent dielectric materials are discussed. The paper focuses on two key emergent technologies driven by ULI processes. First, the recently developed photonic devices, such as compact mode-locked waveguide sources and novel midinfrared waveguide lasers are discussed. Secondly, the phenomenon and applications of selective etching in developing ultrafast laser inscribed structures for compact lab-on-chip devices are elaborated. The review further discusses the conceivable future of ULI in impacting the aforementioned fields.

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“…In this era of modern technological advancements, sapphire plays an important role in the electronic industry. Due to its physical properties such as scratch resistance, superior hardness, tensile strength, impressive thermal conductivity, chemical inertness, high melting point, thermal shock resistance, and transparency to electromagnetic waves in a wide spectral range [1], it is widely used in optoelectronic industries such as the substrate layer for light-emitting diodes [2], in integrated optical and microfluidic devices [3], and touchscreens, micromechanical devices, and optical windows [4]. Even with huge potential in consumer electronics, the power sector, and aerospace and defense applications [5], the exponential growth of sapphire usage has lagged behind expectations.…”

Section: Introductionmentioning

confidence: 99%

Study of Through-Hole Micro-Drilling in Sapphire by Means of Pulsed Bessel Beams

Kuriakose

Bollani²,

Trapani

et al. 2022

Micromachines

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Ultrashort Bessel beams have been used in this work to study the response of a 430-μm-thick monocrystalline sapphire sample to laser–matter interaction when injecting the beam orthogonally through the whole sample thickness. We show that with a 12° Bessel beam cone angle, we are able to internally modify the material and generate tailorable elongated microstructures while preventing the formation of surface cracks, even in the picosecond regime, contrary to what was previously reported in the literature. On the other hand, by means of Bessel beam machining combined with a trepanning technique where very high energy pulses are needed, we were able to generate 100 μm diameter through-holes, eventually with negligible cracks and very low taper angles thanks to an optimization achieved by using a 60-μm-thick layer of Kapton Polyimide removable tape.

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Laser Fabrication of Ship-in-a-bottle Microstructures in Sapphire

Cited by 16 publications

References 0 publications

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Ultrafast laser inscription: perspectives on future integrated applications

Study of Through-Hole Micro-Drilling in Sapphire by Means of Pulsed Bessel Beams

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