We used ultrafast laser inscription to fabricate three-dimensional integrated optical transitions that efficiently couple light from a multimode waveguide to a two-dimensional array of single mode waveguides and back. Although the entire device has an average insertion loss of 5.7 dB at 1539 nm, only ≈0.7 dB is due to mode coupling losses. Based on an analysis which is presented in the paper, we expect that our device should convert a multimode input into an array of single modes with a loss of ≈2.0 dB, assuming the input coupling losses are zero. Such devices have applications in astrophotonics and remote sensing.

This paper reviews the recent advancements achieved using ultrafast laser inscription (ULI) that highlight the cross-disciplinary potential of the technology. An overview of waveguide fabrication is provided and the three distinct types of waveguide cross-section architectures that have so far been fabricated in transparent dielectric materials are discussed. The paper focuses on two key emergent technologies driven by ULI processes. First, the recently developed photonic devices, such as compact mode-locked waveguide sources and novel midinfrared waveguide lasers are discussed. Secondly, the phenomenon and applications of selective etching in developing ultrafast laser inscribed structures for compact lab-on-chip devices are elaborated. The review further discusses the conceivable future of ULI in impacting the aforementioned fields.

We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at∼1039nm, with 1.5GHz repetition rate at an average 202mW output power. This performance is due to the combination of the graphene saturable absorber with the high quality laser glass.

A negative value for the nonlinear refraction in graphene is experimentally observed and unambiguously verified by performing a theoretical analysis arising from the conductivity of the graphene monolayer. The nonlinear optical properties of multi-layer graphene are experimentally studied by employing the Z-scan technique. The measurements are carried out at 1150, 1550, 1900 and 2400 nm with a 100-femtosecond laser source. Under laser illumination the multi-layer graphene exhibits a transmittance increase due to saturable absorption, followed by optical limiting due to two-photon absorption. The saturation irradiance Isat and the two-photon absorption coefficient β are measured in the operating wavelength range. Furthermore, an irradiance-dependent nonlinear refraction is observed and discriminated from the conventional nonlinear refraction coefficient n2_, which is not irradiance dependent. The values obtained for the irradiance-dependent nonlinear refraction are in the order of ∼10^-9 cm²W^-1, approximately 8 orders of magnitude larger than any bulk dielectrics.

We report the fabrication of single mode buried channel waveguides for the whole mid-infrared transparency range of chalcogenide sulphide glasses (λ ≤ 11 µm), by means of direct laser writing. We have explored the potential of this technology by fabricating a prototype three-dimensional three-beam combiner for future application in stellar interferometry, which delivers a monochromatic interference visibility of 99.89% at 10.6 µm, and an ultrahigh bandwidth (3-11 µm) interference visibility of 21.3%. These results demonstrate that it is possible to harness the whole transparency range offered by chalcogenide glasses on a single on-chip instrument by means of direct laser writing, a finding that may be of key significance in future technologies such as astrophotonics and biochemical sensing. . An essential step in order to unleash all of this potential science is to develop integrated optical platforms capable of addressing the technological requirements that each field demands. In this sense, the development of on-chip instruments such as optical sensors, high resolution spectrometers, or sophisticated beam combiners, is currently of high interest for the previous mentioned applications [1,2,5,6,7].Although several MIR two-dimensional (2D) planar schemes have been recently developed [8,9], these are all based on multiple-step surface deposition and processing techniques, which place inherent limits to the device design and capabilities. In this Letter, we report the single-step fabrication of three-dimensional (3D) MIR photonic circuits inside chalcogenide glass, by means of ultrashort-pulse direct laser writing (DLW) [10][11][12][13][14]. We show that the MIR waveguide cores can be tailored in both size and refractive index, and can also be spatially positioned at will inside the material, making the chip extremely robust against mechanical stress, vibrations, humidity, and temperature changes [11]. Moreover, we also evidence that the useful range of these DLW waveguides is, as suspected [12], ultimately limited by the transparency range of the material used, and not by the fabrication technique.In this work, high quality research and commercial chalcogenide sulphide glasses were used, both of which are free of highly toxic arsenic compounds. These glasses were commercial GaLaS (here after GLS) [14] and the research composition 75GeS2-15Ga2S3-4CsI-2Sb2S3-4SnS (here after GCIS) [15]. The MIR transmission upper limit of commercial GLS is known to be ~10 µm [14], while for GCIS we measured a slightly higher transmission upper limit of ~11 µm, as it is shown in Figure 1(a).