2014
DOI: 10.1038/nmat4064
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Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

Abstract: Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers and high-speed transistors. Creating analogous heterojunctions between different 2D semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. Th… Show more

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Cited by 945 publications
(895 citation statements)
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References 32 publications
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“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”
Section: Preparation Methodsmentioning
confidence: 99%
“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”
Section: Preparation Methodsmentioning
confidence: 99%
“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”
Section: Preparation Methods and Characterizationsmentioning
confidence: 99%
“…Lateral TMD heterostructures can be constructed by 'stitching' the edges of two TMD sheets together using covalent bonds. In the past few years, there has been a flurry of papers [5][6][7][8][9] reporting methods for synthesizing TMD lateral heterostructures using edge epitaxial growth, a method that allows a second TMD to grow at the edge of another, pre-grown TMD crystal. These heterostructures can be fabricated into p-n junctions, which conduct currents in only one direction (a property known as rectification), and constitute one of the building blocks of modern electronic and optoelectronic devices.…”
Section: Transition-metal Dichalcogenides (Tmds)mentioning
confidence: 99%
“…Lateral TMD heterostructures have previously been made in one-step procedures 5,6 that lacked the flexibility to make multi-junction heterostructures or more than one type of heterostructure, or in two-step or multi-step processes that involve many changes of TMD precursors and reaction chambers [7][8][9] . Sahoo and colleagues' method overcomes those constraints in a 'one-pot' procedure -a process that allows several steps to be performed in one reaction chamber.…”
Section: Transition-metal Dichalcogenides (Tmds)mentioning
confidence: 99%
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