Liquid–solid Interface Shape Observed in Silicon Crystals Grown by the Czochralski Method

Abstract

A study has been made of the macroscopic structure of the liquid–solid interface which exists during growth of silicon crystals by the Czochralski method. In two crystals the interface was seen to contain a (111) facet. The development of such facets is discussed with reference to current crystal growth theories.

Some remarks on the undercooling of the Si(1 1 1) facet and the “Monte Carlo modeling of silicon crystal growth” by Kirk M. Beatty & Kenneth A. Jackson, J. Crystal Growth 211 (2000) 13

“…He measured the radius of the interface bending and the width of the {1 1 1} facet. By estimating the thermal gradient be 16 K/mm (for both cases) he got an undercooling of 9 K. First experiments in this direction have been performed by Edwards, who analysed one Czochralski crystal grown in direction 4.51 off /1 1 1S with v pull ¼ 8:4 Â 10 À4 cm=s ð0:5 mm=minÞ [8]. He approximated G T % 15 K=mm and got DT ¼…”

“…(For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.) Undercoolings on the f1 1 1g facet of Si (and Ge) by experiments: Edwards[8],Brice and Whiffin (Ge) …”

A New Method for Revealing Striations in High-Resistive Floating-Zone Silicon Crystals

“…Some investigations have already been published reporting on ion migration, creation of traps and surface states, the improvement of the dielectric strength, and changes of the refractive index (1)(2)(3)(4). Results show that radiation damage causes the observed effects in many cases.…”

“…The effect of ion implantation on the properties of silicon dioxide layers is of interest in semiconductor device technology and studies of this topic may help to promote the basic research in amorphous materials. Some investigations have already been published reporting on ion migration, creation of traps and surface states, the improvement of the dielectric strength, and changes of the refractive index (1)(2)(3)(4). Results show that radiation damage causes the observed effects in many cases.…”

Effects of Grown-ln and Process-Induced Defects in Single Crystal Silicon

“…The two most striking growth inhomogeneities of silicon single crystals grown from the melt are growth spirals and growth cores (1)(2)(3)(4)(5). Spiral growth (1)(2)(3)(4) is produced when the axis of crystal rotating is not coincident with an axis of thermal symmetry so that the growing interface experiences temperature fluctuations with the period of the rotation.…”