Low dark current InGaAs/InAlAs/InP avalanche photodiode

Muszalski, J.; Kaniewski, J.; Kalinowski, K.

doi:10.1088/1742-6596/146/1/012028

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Device Structure and Fabrication2

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Cited by 3 publications

(2 citation statements)

References 14 publications

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“…Given the requirements above, state-of-the-art APDs are designed with separate absorption, grading, charge and multiplication (SAGCM) layers [10,11]. By carefully controlling doping and thickness values of the layers it is possible to precisely adjust the electric field across the device.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Infrared Physics & Technology

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Section: Device Structure and Fabricationmentioning

confidence: 99%

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Infrared Physics & Technology

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“…Therefore, our APD structure is designed with separate absorption, grading, charge, and multiplication (SAGCM) layers . In particular the doping level of the charge layer is very critical.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Hereof, a combination of a p-type grading layer and charge layer is presented. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal low punch-through and low breakdown voltage of V-pt approximate to 8.5 V and V-bd approximate to 2.3 V, respectively. A maximum gain of M > 300 in the linear operation mode is demonstrated at room temperature and M = 10 has been measured at 20 V bias

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Study of InGaAs/InAlAs avalanche photodiodes grown on InP

Zheng

et al. 2018

Infrared, Millimeter-Wave, and Terahertz Technologies V

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Low dark current InGaAs/InAlAs/InP avalanche photodiode

Cited by 3 publications

References 14 publications

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Study of InGaAs/InAlAs avalanche photodiodes grown on InP

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