Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor deposition

Liou, Y.; Inspektor, A.; Weimer, R. A.; Messier, R.

doi:10.1063/1.101807

Cited by 105 publications

(22 citation statements)

References 7 publications

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“…1,2 For the optical application, particularly, low temperature deposition of diamond film is inevitably required because of the low melting point of optical materials such as glass, NaCl, KBr, and so forth. [3][4][5] Despite this advantage, deposition rate and diamond quality have been reported to be inferior compared to the normal deposition technique ͑10 TorrϽtotal pressureϽ100 Torr͒ 3,6 because the low total pressure technique should give a low concentration of the diamond precursor. 4,5 The technique can enhance diamond film uniformity.…”

Section: Introductionmentioning

confidence: 99%

Effect of the substrate state on the formation of diamond film in a low temperature microwave-plasma-enhanced chemical vapor deposition system

Kim¹,

Park²,

Jung³

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Effect of graphitic carbon films on diamond nucleation by microwaveplasmaenhanced chemicalvapor deposition Lowtemperature diamond deposition by microwave plasmaenhanced chemical vapor deposition Diamond films were deposited on substrates using a low temperature microwave-plasma-enhanced chemical vapor deposition system. Low temperature ͑below 500°C͒ deposition can be achieved only by making the substrate position remote from the plasma under the normal deposition condition. The substrate was untreated or was pre-treated by 30 m diamond powder. Among various substrates ͑untreated silicon, pre-treated silicon, pre-treated quartz, untreated glass, and pre-treated glass͒, pre-treated quartz and pre-treated glass enhance the diamond formation, while untreated glass gives only graphite formation even under the same deposition conditions. We understand that the better formation of diamond on pre-treated glass and pre-treated quartz was due to the existence of a diamond particle on the substrates. We also deposited diamond films on pre-treated glass at various CH 4 concentrations. The largest grain size can be acquired at 3% of CH 4 concentration and the growth rate of the film increases with increasing CH 4 concentration.

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Section: Introductionmentioning

confidence: 99%

Effect of the substrate state on the formation of diamond film in a low temperature microwave-plasma-enhanced chemical vapor deposition system

Kim¹,

Park²,

Jung³

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…4. However, the cross section offilm (11) looked like an amorphous structure, despite the fact that film (12) showed clear columnar crystal phases in its cross view. The film (8) deposited at 450°C in the eO/H2 system had definite cube-like characteristics and their crystal sizes were about 0.3-0.5 f1m.…”

Section: The Sem Images Of Obtained Filmsmentioning

confidence: 98%

“…12 In this paper, low temperature growth was attempted in both CO/H2 and CO/H2/ Ar systems. Polycrystalline diamond was synthesized in a CH 4 /H 2 /0 2 system at an average temperature of 400°C using a pulsed mode microwave plasma discharge system.…”

Section: Introductionmentioning

confidence: 99%

Low temperature (∼400 °C) growth of polycrystalline diamond films in the microwave plasma of CO/H2 and CO/H2/Ar systems

Muranaka

Yamashita

Miyadera

1991

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inReal time spectroellipsometry for optimization of diamond film growth by microwave plasmaenhanced chemical vapor deposition from CO/H2 mixtures Flattened diamond crystals synthesized by microwave plasma chemical vapor deposition in a COH2 systemThe role of hydrogen in diamond synthesis using a microwave plasma in a CO/H2 system In order to elucidate the growth conditions for pure diamond of good crystallinity, the correlation of the properties of deposited films and gas phase species in microwave plasma of CO/H2 and CO/H2 / Ar systems was investigated through film characterization and optical emission spectroscopic measurements. It was found that the increase of gas phase atomic hydrogen and the suppression of gas phase acetylene were effective for the growth of pure diamond of good crystallinity. Low temperature growth was proposed to realize these growth conditions. It was confirmed that diamond films with good crystallinity and optical transparency could be synthesized at 410 °C (diamond film growth was possible even at 365°C). The growth rate was accelerated in a CO/H 2 / Ar system (0.33 J-lm/h at 410 °C), which was several times faster than that obtained in a CO/H2 system (0.14 J-lm/h at 450°C).

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“…9,10 Attempts at nucleating diamonds on oxide materials using similar approaches have not been successful. 11,12 Patscheider 13 indicated that the SiO 2 layer will be preferentially etched away in the CVD process, resulting in rough surface that lowered the nucleation density. Rankin 14 proposed that nucleation of diamonds on SiO 2 still proceeded by surface reaction to form SiC intermediate layer.…”

Section: Introductionmentioning

confidence: 99%

Deposition of diamond films on SiO2 surfaces using a high power microwave enhanced chemical vapor deposition process

Lee

Liu

Lin

1997

Journal of Applied Physics

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Diamonds were successfully nucleated on SiO 2 -coated silicon substrates using a high power microwave plasma enhanced chemical vapor deposition process. Nucleation rates on SiO 2 surfaces ͑i.e., 0.5ϫ10 10 cm Ϫ2 ͒ were, however, still smaller than those on Si surfaces ͑i.e., 1.0ϫ10 10 cm Ϫ2 ͒. The major advantage in using high power microwaves was revealed by optical emission spectroscopy to be that the atomic C and H species produced are more abundant and energetic. Therefore, the negative bias effect is enabled and the formation of sp 3 bonds is enhanced. The nucleation of diamonds on SiO 2 surface is thus made possible. The growth of diamonds behaved similarly on the prenucleated surface, regardless of the nature of the substrates. Diamonds were of single grain columnar structure with random orientation when deposited without bias and were of multi-grain columnar structure with ͓111͔ or ͓001͔ preferred orientation when deposited under Ϫ100 V dc bias. Multi-grain columnar structure was ascribed to the induction of secondary nucleation at the presence of bias voltage.

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Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor deposition

Cited by 105 publications

References 7 publications

Effect of the substrate state on the formation of diamond film in a low temperature microwave-plasma-enhanced chemical vapor deposition system

Effect of the substrate state on the formation of diamond film in a low temperature microwave-plasma-enhanced chemical vapor deposition system

Low temperature (∼400 °C) growth of polycrystalline diamond films in the microwave plasma of CO/H2 and CO/H2/Ar systems

Deposition of diamond films on SiO2 surfaces using a high power microwave enhanced chemical vapor deposition process

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