&lt;title&gt;Optical lithography with chromeless phase-shifted masks&lt;/title&gt;

Toh, Kenny K.H.; Dao, Giang T.; Singh, Rajeev R.; Gaw, Henry T.

doi:10.1117/12.44775

Cited by 20 publications

(7 citation statements)

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“…The "Phase-First" approach is also called Sidewall Chrome Alternating Aperture mask: "SCAAM" [5]. For exposed phase edge PSM paradigm, glass transition step for the critical feature patterning is uncovered [7]. The exposed phase edge paradigm has three types: single edge, double edge, and dense edge.…”

Section: Phase Shift Paradigmmentioning

confidence: 99%

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Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

2003

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Alternating phase shift mask (altPSM) as a strong resolution enhancement technique is increasingly required to meet the tighter lithographic requirements on gate critical dimension (CD) control, depth of focus and low k1 applications in full chip patterning of logic and memory devices. While the frequency doubling mechanism of altPSM benefits the quality of imaging, the inherent intensity asymmetry between phase shifters, or image imbalance, causes line shift. The effect of mask topography on electromagnetic wave propagation must be compensated in practice. Various designs of mask structure for correcting the intrinsic imaging asymmetry have been extensively studied. In this paper, we discuss several image imbalance correction methods for hidden phase edge altPSM architectures, including chrome undercut, shifter width sizing, sidewall chrome alternating aperture mask. We compared both hidden phase edge as well as exposed phase edge altPSM in terms of scalability, image correction effectiveness, and manufacturability for 90-nm, 65-nm technology nodes and beyond. Specifically, we define the altPSM architecture scalability in terms of three key components: 1. Mask manufacturability, design layout complexity, and effectiveness of image balance correction, 2. Mask patterning resolution, pattern fidelity, image placement, CD & overlay control at both chrome and glass levels, 3. Tightening quartz etch process control for given phase error tolerance. Applications of altPSM technology to line/space, hole, and phase shifted assisted features patterning with various altPSM architectures are also addressed.

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Section: Phase Shift Paradigmmentioning

confidence: 99%

“…When the exposed phase edges are arrayed into dense grating, the effective transmission and effective phase can be modulated by the CD and duty cycle of the phase grating for target feature patterning [7,8,10]. …”

Section: Phase Shift Paradigmmentioning

confidence: 99%

Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

2003

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“…The first mask contains the phaseshifted geometry and the second is a binary mask that is used to remove unwanted phase edges caused by the initial exposure and has been discussed in detail by others. [1][2][3][4][5] The use of high transmission mask technology has been demonstrated to provide excellent image capabilities for contact holes. 6 .…”

Section: Introductionmentioning

confidence: 99%

High transmission mask technology for 45nm node imaging

Conley¹,

Cangemi

Kasprowicz

et al. 2005

Optical Microlithography XVIII

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The lithography prognosticator of the early 1980's declared the end of optics for sub-0.5µm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into laser bands of 248nm and to 193nm. As each wavelength matured, innovative optical solutions and further improvements in photoresist technology have demonstrated that extending imaging resolution is possible thus further reducing k 1 . Several authors have recently discussed manufacturing imaging solutions for sub-0.3k 1 and the integration challenges.The requirements stated in the ITRS roadmap for current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will continue further for aggressive imaging solutions. Lithography and more importantly "imaging solutions" are driven by economics. The technology might be extremely innovative and "fun", however, if it's too expensive it may never see the light of scanner.The authors have investigated and compared the capability of high transmission mask technology and image process integration for the 45nm node. However, the results will be graded in terms of design, mask manufacturability, imaging performance and overall integration within a given process flow. INTRODUCTIONLithographers are continuously trying to improve process windows for a manufacturing technology and developing new options for the next technology node. A way to achieve improvements in resolution is simply to migrate to a shorter wavelength. Unfortunately, a change in wavelength typically requires a large capital expense and significant process development effort. Alternatively, off-axis illumination techniques, such as annular and quadruple can be applied to enhance an existing process. All high-end exposure systems in use have the ability to utilize several different illumination schemes; so alternate illumination implementation is relatively straightforward to implement to the lithographer unless one begins looking at custom apertures. As the cost of tools continues to rise

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“…The first mask contains the phase-shifted geometry and the second is a binary mask that is used to remove unwanted phase edges caused by the initial exposure and has been discussed in detail by others. [3][4][5][6] 2. 1.30 NUMERICAL APERTURE SYSTEM FOR 193 NM…”

Section: Introductionmentioning

confidence: 99%

The capability of a 1.3-NA μstepper using 3D EMF mask simulations

Conley¹,

Meute

Webb

et al. 2006

SPIE Proceedings

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Lithographic methods of imaging in resist can be extended with the addition of immersion fluid. The higher index of refraction fluid can be used to print smaller features by increasing the numerical aperture beyond the limits of dry lithography. Alternately, an immersion optical system can achieve a larger depth of focus at the same numerical aperture as the equivalent dry lithography system.When numerical apertures are significantly greater than 1.0, polarization effects start to impact resolution seriously. Special illumination conditions will be used to extend resolution limits. Additional factors that affect imaging in resist need to be included if we are to achieve new resolution limits using high index of refraction materials to increase numerical apertures. In addition to material inhomogeneities, birefringence and optical surface effects, material absorption, coatings and index differences at boundaries will have a larger impact on image resolution as ray angles in the imaging system continue to increase with numerical aperture . Aerial and resist imaging effects that material characteristics have on polarization, uniformity and aberrations in the lens pupil will be studied.

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<title>Optical lithography with chromeless phase-shifted masks</title>

Cited by 20 publications

References 0 publications

Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

High transmission mask technology for 45nm node imaging

The capability of a 1.3-NA μstepper using 3D EMF mask simulations

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