Microwave integrated circuits using thin-film BST

York, R.A.; Nagra, A.S.; Erker, E.G.; Taylor, T. R.; Periaswamy, P.; Speck, James S.; Streiffer, S. K.; Auciello, Orlando

doi:10.1109/isaf.2000.941540

Cited by 40 publications

(20 citation statements)

References 8 publications

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“…Above 10 GHz, the quality factor of semiconductors drastically degrades, while varactors based on ferroelectrics have constant quality factor throughout millimeterwave frequencies [5]. At present, tunable microwave devices based on ferroelectrics are widely being considered for tunable/reconfigurable circuits such as phase shifters, filters and VCOs [6][7]. In this paper, we present a new varactor shunt switch based on Barium Strontium Titanate (Ba 0.6 Sr 0.4 TiO 3 ) henceforth BST(60/40) ferroelectric thin-films, for Si MMIC compatible reconfigurable circuits.…”

Section: Introductionmentioning

confidence: 99%

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

Subramanyam¹,

Ahamed²,

Biggers³

et al. 2005

Frequenz

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Section: Introductionmentioning

confidence: 99%

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

Subramanyam¹,

Ahamed²,

Biggers³

et al. 2005

Frequenz

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“…Although, it must be kept in mind that level of stoichiometric control is limited to major constituents of the film, for example, the Ba, Sr, and Ti in BST films, hence, deposition of undoped BST (3 components) thin films has been fairly successful via sputtering. [42][43][44] However, successful fabrication of multicomponent (4 or more elemental components, i.e., doped BST) and designer/compositionally tailored/graded BST based films has not been successfully accomplished with precise control of film stoichiometry. One of the major reasons for this is that the yield and sticking coefficients of the various components are not equal, and therefore, precise control of the film stoichiometry is often difficult.…”

Section: B Rf Sputtering Depositionmentioning

confidence: 99%

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

147

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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“…Determining the performance in the kHzMHz frequency range is crucial for obtaining insight into the quality of the dielectric layers. Such tunable ferroelectric capacitors can be integrated in microwave applications such as impedance networks [8], phase shifters [9], or in RF filters [10].…”

Section: Ferroelectric Capacitor Test-structuresmentioning

confidence: 99%

Reducing AC impedance measurement errors caused by the DC voltage dependence of broadband high-voltage bias-tees

Tiggelman

Reimann

Schmitz

2007

2007 IEEE International Conference on Microelectronic Test Structures

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Abstract-During the AC impedance characterization of devices, from the kHz-range up to the GHz-range, accuracy can be lost when a DC voltage is applied. Commercial high-voltage broadband bias-tees are often voltage-dependent, which can cause inaccuracies at low frequencies. A calibration technique with applied bias significantly improves the measurement accuracy. Additionally, a bias-tee has been developed with a voltageindependent capacitor, suitable for DC voltages up to 500 V showing excellent performance up to several gigahertz. PIN diode limiters protect the measurement equipment from damage in case of a device breakdown.

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Microwave integrated circuits using thin-film BST

Cited by 40 publications

References 8 publications

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Reducing AC impedance measurement errors caused by the DC voltage dependence of broadband high-voltage bias-tees

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