Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Abstract

In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III–V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation

“…The ALD passivation therefore improves both the mobility and sheet carrier density of near-surface AlInAs/GaInAs twodimensional electron gas (2DEG) channels. Similar findings were recently reported by Södergren et al [41].…”

Optimization of Near‐Surface Quantum Well Processing

“…The Hall mobility obtained here is consistent with previous works. [20] It is, however, interesting to note that the mobility is higher for samples with higher In content, which is in line with the fact that InAs has higher electron mobility than GaAs. In Figure 3d, the mean value of the fitted contact resistance, which is positive for all samples, is plotted together with a 95% confidence interval.…”

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

“…InGaAs quantum wells, coated with InAlAs and grown on AlGaAsSb buffer layers by the method of molecular beam epitaxy, can achieve room-temperature mobilities that can be used to fabricate Field-effect transistors (FETs) for the performance of DC and RF characteristics [22]. It has been shown that in InGaAs/InP quantum well structure, the mobility increases with depositing a layer of oxide on the surface due to decrease in the number of defects at the interface [23]. In a GaAs/InGaAs QW, the transport of electrons has been analyzed with the application of many-body effects and magnetic field, taking into consideration of both non-phonon and phonon scatterings [24].…”