Modeling IC components based on TLP I-V curves and transient responses from SEED perspective

Wang, Yi–Ze; Wang, Yuan; Lu, Guangyi; Du, Gang; Zhang, Xing; Huang, Ru

doi:10.1109/isemc.2018.8393904

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses LabVIEW software to control and match the peripheral electronic instruments such as ESD pulse generators, high-frequency digital oscilloscopes, and digital power meters, thus enabling automated measurement mechanisms.…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

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ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (It2) of the nLDMOS element were determined using the I–V characteristic. As the N+ area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the It2 value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost.

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“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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Modeling Study of Power-On and Power-Off System-Level Electrostatic Discharge Protection

Wang

2021

IEEE Trans. Electromagn. Compat.

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Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

Wang

et al. 2019

2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electr

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Modeling IC components based on TLP I-V curves and transient responses from SEED perspective

Cited by 3 publications

References 13 publications

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Modeling Study of Power-On and Power-Off System-Level Electrostatic Discharge Protection

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

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