Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits

“…Optoelectronic integration, where GaN LEDs and their driver GaN FETs are monolithically integrated on the same material system has been demonstrated, [11] and FETs with all contacts on the same side have been a good fit tointegration efforts based on LED technology.Integration promises to provide a compact solution allowing higher-speed switching for combined lighting and optical networking (LiFi) than currently available.Current LiFi systems employ silicon based FETs which are typically part of an isolated driver seperated from the GaN LED itself, [12] butthis is a bulky solution, introducing large interconnect parasitics.For micro-LED displays, GaN micro-LEDs are bonded on top of silicon-based thin-film transistors (TFT) or a complementary metal-oxidesemiconductor (CMOS) backplane, [13] but the diverse material systems involved lead to difficulties in fabrication. To date, GaN LEDs have been monolithically integrated with a variety ofGaN FET structures, including AlGaN/GaN HEMTs, [11,[14][15][16] MOSFETs, [17][18] and nanowire FETs; [19] UMOSFETscan be monolithically integratedwith LEDs on low-cost sapphire or silicon substrates. Previously, stripe-cell, quasi-vertical power UMOSFETs [20] and hexagonal-cell, quasi-vertical UMOSFETs [21] have been reported in GaN.Neither wasspecifically developed for optoelectronic integration, and the latter lacks the n-voltage blocking layersthat would be Author Manuscript required to make them power FETs.…”

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

“…The reason for this N active resistance was found to be due to the abnormal oxidation phenomenon on the N active side of the salicide. Specimens were treated with a buffered oxide etch (BOE) [31] process for 15 s after cross section cutting and observed by cross section using SEM ( Figure 5). A trace of oxide-like material was etched off just below the contact hole, which may have led to an increase in resistance.…”

Single GaN Nanowires for Extremely High Current Commutation

“…[ 8,9 ] This has motivated intense research in this field in the last few years. [ 8–13 ] However, due to the complexity of the 3D nanoscale architecture sensitive to surface charge effects, the quantification of the current density in NWs is not trivial. Quantitative evaluation of the current density and analysis of the operation stability of ultrathin GaN NWs are lacking in the literature.…”