Near room-temperature InAsSb photodiodes: Theoretical predictions and experimental data

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

“…In Figure 4, Arrhenius plots of the dark current density are compared with results from the InAs 0.87 Sb 0.13 p-i-n. Close agreement was observed between the nBn current densities for the three device areas, showing the suppression of surface currents and confirming the reliability of the data. At À0.1 V applied bias, the dark current densities of the p-i-n are more than two orders of magnitude greater than the nBn at 300 K and more than six orders greater at 200 K. R 0 A values for the p-i-n were measured to be approximately 3 Â 10 À2 Xcm 2 at 220 K. While these are significantly lower than values for InAs 0.89 Sb 0.11 p-i-n diodes grown on native GaSb substrates, reported to be approximately 1 Xcm 2 at the same temperature, 16 R 0 A values for the nBn were found to be in excess of 3 Â 10 3 Xcm 2 at 220 K and in excess of 10 6 Xcm 2 at 150 K. In comparison, typical InSb detectors require cooling to roughly 90 K to achieve R 0 A values of 10 6 Xcm 2 . 17 Notably, these improvements are observed in spite of the mismatched substrate and an additional lattice-mismatch in the absorption layer, showing that the SRH process is strongly suppressed in the nBn whilst, at the same time, achieving an extended cut-off wavelength.…”

Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices

“…Such observations have been reported for InP and GaAs [20,21]. In those [16], and the triangles are from Ref. [17].…”

“…Also shown are the energy gap dependence on composition as given by Ref. [16] (solid curve) and energy values reported in Ref. [17].…”

Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results

“…Of them, the Auger process becomes dominant as the temperature increases and becomes crucial at or near room temperature. 9 It is understood that the Auger mechanism is most likely to impose the fundamental limit on the performance of photovoltaic detectors based on narrow-bandgap materials like InSb and related materials operating at or near room temperature.…”

“…III-V, II-VI, and IV-VI alloy semiconductors are generally used as principal materials for making optoelectronic devices operating in the range from below 1-m to above 10-m wavelength. [1][2][3][4][5][6][7][8][9][10][11][12][13] The midinfrared ͑MIR͒ sources and detectors operating beyond 2 m are attractive for use in unguided free-space optical communication in 3-to 5-m wavelength region. These devices have yet to find practical applications in fiber optic communication systems.…”