Non-contact sound velocities and attenuation measurements of several ceramics at elevated temperatures

Singh, K. J.; Matsuda, Youichi; Hattori, Koichiro; Nakano, H.; Nagai, Satoshi

doi:10.1016/s0041-624x(02)00392-x

Cited by 16 publications

(13 citation statements)

References 12 publications

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“…3(a) is considered to be the throughthickness resonance frequency in the Al/Si 3 N 4 /Al three layer film. Using the mass densities and sound velocities of Al and Si 3 N 4 (Singh et al, 2003), we analytically calculated the fundamental resonance frequency for the multilayer system with the methodology developed in the previous study (Ogi et al, 2009). The result gives 43 GHz, which is in good agreement with the observation.…”

Section: Discussionsupporting

confidence: 79%

Ultrathin-film oscillator biosensors excited by ultrafast light pulses

Ogi

Kawamoto

Nakamura

et al. 2010

Biosensors and Bioelectronics

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Section: Discussionsupporting

confidence: 79%

Ultrathin-film oscillator biosensors excited by ultrafast light pulses

Ogi

Kawamoto

Nakamura

et al. 2010

Biosensors and Bioelectronics

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“…The process of matter ejection invoked above seems to be reasonable since this latter value is of the order of the sound velocity in zirconia, 50 and it is also close to the velocity of a hot gas ejected by effusion from a Knudsen cell. When the ion fluence is increased, individual tracks overlap and a specific microstructure is formed in the solid.…”

Section: Discussionmentioning

confidence: 68%

Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia

Moll

Thomé

Vincent

et al. 2009

Journal of Applied Physics

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High-temperature stability of ion-implanted zirconia and spinel Cubic zirconia single-crystals (yttria-stabilized zirconia (YSZ)) have been irradiated with 4 MeV Au 2þ ions in a broad fluence range (namely from 5 Â 10 12 to 2 Â 10 16 cm À2) and at five temperatures: 80, 300, 573, 773, and 1073 K. Irradiated samples have been characterized by Rutherford backscattering spectroscopy in channeling mode, X-ray diffraction and transmission electron microscopy techniques in order to determine the disordering kinetics. All experimental results show that, whatever is the irradiation temperature, the damage build-up follows a multi-step process. In addition, the disorder level at high fluence is very similar for all temperatures. Thus, no enhanced dynamic annealing process is observed. On the other hand, transitions in the damage accumulation process occur earlier in fluence with increasing temperature. It is shown that temperature as low as 573 K is sufficient to accelerate the disordering process in ion-irradiated YSZ. V C 2014 AIP Publishing LLC. [http://dx.

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“…Since nitrogen atoms can have three bonds to Si atoms, while oxygen atoms have two bonds, the Si-N-Si bond angle becomes smaller than the Si-O-Si angle h, so that we can control h by doping N into v-SiO 2 . Because vitreous silicon nitride, v-Si 3 N 4 , exhibits negative (usual) TCV, 17 by increasing the N atoms, we will observe a positive-to-negative change of TCV, which provides us with important information on the positive TCV mechanism. Furthermore, this approach will reveal a zero-TCV single material.…”

mentioning

confidence: 93%

“…1(a), together with reference values. 17,[25][26][27] As the nitrogen ratio increases, the mass density increases because of reduction of the bond angles between polyhedrons (angles of O-Si-O, O-Si-N, and N-Si-N), leading to the decrease in the averaged atomic distance. This causes the significant increase in the elastic modulus.…”

mentioning

confidence: 99%

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

Nagakubo

Tsuboi

Kabe

et al. 2019

Applied Physics Letters

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Vitreous silicon oxide (v-SiO 2 ) shows anomalous phonon properties such as the positive temperature coefficient of velocity (TCV). Variation of the Si-O-Si bond angle between SiO 4 tetrahedrons has been recognized to be the key, but the origin of TCV still remains unclear. In this study, we controlled the bond angle by doping nitrogen and measured TCV of vitreous silicon oxynitride thin films with various nitrogen concentrations using picosecond ultrasonics. TCV significantly decreases by adding a small amount of nitrogen, and it shows positive to negative values as the nitrogen concentration increases. We evaluated the bond-angle change by Fourier-transform infrared spectroscopy, which decreases with the increase in the nitrogen content. We also find that the temperature rise in nondoped v-SiO 2 decreases the bond angle, leading to an increase in the sound velocity. We then reveal theoretically that the bond-angle change dominates the origin of the positive TCV. This study indicates the existence of a zero-TCV single material, and we discover that the specific content of v-SiO 1.71 N 0.19 achieves this.

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Non-contact sound velocities and attenuation measurements of several ceramics at elevated temperatures

Cited by 16 publications

References 12 publications

Ultrathin-film oscillator biosensors excited by ultrafast light pulses

Ultrathin-film oscillator biosensors excited by ultrafast light pulses

Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

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