Novel high-isolation FET switches

Imai, N.; Minakawa, Akira; Okazaki, H.

doi:10.1109/22.493921

Cited by 17 publications

(6 citation statements)

References 11 publications

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“…The topology of switch version 2 is based on a seriesshunt -series configuration to achieve a high isolation. An extra R-C-R branch is applied to add an extra pole for better isolation [7]. One of the shunt devices is capacitor-shunted and the other one is inductor-shunted.…”

Section: Spdt Switch Versionmentioning

confidence: 99%

X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Janssen

Heijningen

Provenzano

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

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Section: Spdt Switch Versionmentioning

confidence: 99%

X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Janssen

Heijningen

Provenzano

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…So, mixed configuration of series and shunt switch HEMT has ever been used to minimize the characteristics of the frequency dependency. The mixed configuration requires two kinds of control voltage and results to increase the complexity of the control circuit [5].…”

Section: A Isolation Enhancement Techniquementioning

confidence: 99%

Design of High Performance HEMT Switch for S-band MSM of Satellite Transponder

Chang

Noh

Yom

2008

VTC Spring 2008 - IEEE Vehicular Technology Conference

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A SPST Switch MMIC which used for Microwave Switch Matrix (MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RF FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz ~ 4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMIC.

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“…It follows from published reports that most TR switches have the series-shunt configuration, employing different matching circuits [6][7][8][9][10]. At the same time, insufficient consideration has been given to using stub directional couplers in multithrow switches.…”

Section: Basic Switchmentioning

confidence: 99%