Abstract. YBa2Cu307_~ thin films were deposited by pulsed laser deposition (PLD) on various substrates with different misfit. X-ray diffraction (XRD) measurements were performed in order to characterize the growth quality of the films and to study the orientation between the films and the substrates. On the used substrates all investigated films are relaxed independently, and epitaxially grown who show a long range ordered two domain structure. The elemental concentration depth profiles of these films detected by secondary neutral mass spectrometry (SNMS) show homogeneous stoichiometfic element distributions with slight deviation of the Y content.Key words: HTSC thin films, XRD, SNMS.Probably, the first technological application of high-To superconductors (HTSC) will be in the form of thin films. In addition to the technological parameters during thin film deposition and annealing treatments the interaction between thin film and substrate material (misfit, mechanical stress, interdiffusion processes) determines the crystallographic and superconducting properties of HTSC thin films. In many cases the physical properties of substrate materials influence the technological parameters of HTSC devices. Therefore the investigation of the influence of substrate material and of the interaction between substrate and thin film on the formation of the crystallographic structure and on superconductive properties is important [1][2][3][4][5]. These investigations are also interesting for multilayer systems where HTSC thin films are combined with other materials like magnetic oxids, semiconductors or insulators [-6].* Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday ** To whom correspondence should be addressedIn this work we report on XRD measurements to characterize the crystallographic structure (growth orientation, epitaxy, mosaic spread) of YBazCu30 7_~ thin films on different substrate materials like (001)MgO, (001)SrTiO 3 and (1-102)ct-AlzO 3 (r-sapphire with and without (001)CEO2 buffer layer). The films were prepared by pulsed laser deposition. The depth distribution of elemental concentration was determined by secondary neutral mass spectrometry in order to characterize the interface and interdiffusion effects between thin films and substrate.
ExperimentalThe pulsed laser deposition equipment is described in detail in [7]. The used UHV chamber was constructed for large area PLD to 3 inch. The laser LAMBDA PHYSIK LPX 305 i cc operates at a wavelength of 248 nm, pulsed energies to 1.2 J and repetition rates to 50 Hz. The distance from target to the substrate can be varied in the range 60 to 130 mm. The substrate is foreseen to be rotated and additionally laterally moved to 45 mm during deposition whereas the laser plumed remains fixed. Hot isostatic pressed pellets were used as target material. YBa2Cu30 7 -~ thin films and CeO 2 buffer layer were deposited typically at oxygen partial pressures p(O2) of 0.35 mbar and of 3* 10 -s mbar, respectively, at a laser energy densi...