On-wafer large signal pulsed measurements

Vidalou, J.F.; Grossier, F.; Camiade, M.; Obregon, J.

doi:10.1109/mwsym.1989.38851

Cited by 17 publications

(4 citation statements)

References 5 publications

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“…Many quiescent bias points have been investigated applying pulses at the device terminals 3. Characterization and Modelling having an interval of 0.5ts with a separation of 0.5ms, [2][3][4]. The pulsed drain-source voltage was swept from 0 An extensive characterization campaign was carried to 24 V, while pulse gate-source voltage was varied from out by the University of Rome Tor Vergata on several -8 up to 1 V. To highlight any frequency dispersion SELEX Sistemi Integrati GaN HEMT devices having 0.5 effects, as seen in Fig.…”

Section: Introduction 2 Device Technologymentioning

confidence: 99%

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GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

Ciccognani

Giannini

Limit

et al. 2008

2008 14th Conference on Microwave Techniques

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Gallium Nitride , superior physical the RF characteristics, often known as frequency properties, in comparison with other semiconductors, dispersion effects in Nitrides. In such context, make GaN HEMT active devices a prime candidate in the AlGaN/GaN HEMTs require a precise device technology implementation of next generation transmitters for radar optimization, a critical characterization phase and an systems, 3G/4G base stations and WiMAX In this accurate and verified large-signal modelling. All these contribution, the characterization, modelling and three aspects are analyzed in this contribution.verification of di,ferent families of high efficiency, highpower devices manufactured at SELEX Sistemi IntegratiIn Section II, GaN HEMT technology is presented, are reported. Process, characterization and modelling together with the resulting physical structure. In Section phases are analyzed to improve and refine the III, active device characterization and modelling steps are technology s fabrication techniques, thermal degradation described in detail. Finally, to validate the modelling issues and dispersion phenomena.approach, the experimental results of active load-pull Keywords measurements on a GaN HEMT are presented in Section GaN Technology, FETs characterization, load pull.IV.

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Section: Introduction 2 Device Technologymentioning

confidence: 99%

“…6. Taking into account the device's power ratings, the 5- The non linear models have been implemented in a -5S(2,2) 5 (2,2) .commercial CAD tool (AWR's Microwave Office) and have been verified by power sweeps measurements, Fig. 9, and by an extensive load pull campaigns described in Section IV.…”

Section: Introduction 2 Device Technologymentioning

confidence: 99%

GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

Ciccognani

Giannini

Limit

et al. 2008

2008 14th Conference on Microwave Techniques

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“…8) The goal of this system is to pulse the DC bias and RF signal of devices synchronously and measure the electrical characteristics before channel temperature can change appreciably. 9) In this way, the data for the measured device will not be affected by the selfheating effect.…”

Section: Methodsmentioning

confidence: 97%

Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

Hu¹,

Chen

Huang

et al. 2007

jjap

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The DC and RF characteristics of lateral-diffused metal-oxide-semiconductor (LDMOS) transistors with different layout structures were studied. The devices were fabricated using a 0.5 mm LDMOS process. The ring and fishbone structures, which are used widely in power devices, were designed and analyzed. We found that the transconductance, on-resistance, cutoff frequency and maximum oscillation frequency were improved using the ring structure, due to a larger equivalent W=L and lower drain parasitic resistance. In addition, the self-heating effect of LDMOS transistors was also investigated by measuring the pulsed current-voltage (I-V) and pulsed RF characteristics. From the measured results, the ring structure appeared to be a better layout design for RF LDMOS transistors.

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“…In addition, the change in temperature during the DC I-V characterization results in a current drift which creates further uncertainty in the device characterization. This phenomenon has been observed especially for high power on-wafer devices where the device substrates do not have good heat sinking capability [2] To eliminate the uincertainty caused by thermal drift during device characterization, all data acquisition must be done under conditions that preserve a constant channel (junction) temperature environment. This isothermal criteria can be achieved by subjecting the device under test (DUT) to a sequence of pulsed voltage or current waveforms [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Discrepancies in the transconductance obtained from pulsed S-parameters and pulsed I-V curves of PHEMT devices

Collantes

Chi²,

Canfield³

et al.

Proceedings of 1997 Asia-Pacific Microwave Conference

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The extrinsic transconductance of a PHEMT device is examined using a rigorous isothermal pulsed I-V technique. The extrinsic transconductance is determined directly from the pulsed I-V (gm-pulsed) measurements and compared with pulsed S-parameter measurements (gm-RF). The discrepancy between gm-pulsed and gm-RF for the Vgs range of -1.0 to -0.4 is less than 10%. Transconductance extracted from the conventional DC I-V measurements (gm-DC) differs by greater than 35% from the gm-RF values over this same Vgs range.

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On-wafer large signal pulsed measurements

Cited by 17 publications

References 5 publications

GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

Discrepancies in the transconductance obtained from pulsed S-parameters and pulsed I-V curves of PHEMT devices

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