Operation of planar and trench SiC MOSFETs in a 10kW DC/DC-converter analyzing the impact of the body diode

Awwad, Abdullah Eial; Dieckerhoff, Sibylle

doi:10.1109/ecce.2017.8095883

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…Recently, many studies have investigated the feasibility and benefits of utilising the body diode of SiC MOSFETs in power applications without anti‐parallel SiC Schottky barrier diode (SBD) [81–83]. Synchronous rectification operation of SiC MOSFET without anti‐parallel SiC SBD can achieve almost the same conversion efficiency of the inverter as conventional inverter using SiC SBD as a freewheeling diode, this is because the external SiC SBD only conducts during the dead time [83].…”

Section: Reliability Of Sic Mosfetsmentioning

confidence: 99%

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

111

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SiC MOSFETs (silicon carbide metal-oxide semiconductor field-effect transistors) are replacing Si insulated gate bipolar transistors in many power conversion applications due to their superior performance. However, ruggedness and reliability of SiC MOSFETs are still big concern for their widespread applications in the market, especially in safety-critical applications. The objective of this study is to provide a comprehensive picture on the ruggedness and reliability of commercial SiC MOSFETs, discover their failure or degradation mechanism, and propose some possible mitigation methods through both literature survey and in-depth analysis. The ruggedness of SiC MOSFETs discussed here includes short-circuit (SC) ruggedness, avalanche ruggedness, and their failure mechanism. The reliability issues include gate oxide reliability, degradation under high-temperature bias stress, repetitive SC stress, avalanche stress, power cycling stress, body diode's surge current stress, and their degradation mechanism. Furthermore, this study discusses methods and solutions to improve their ruggedness and reliability.

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Section: Reliability Of Sic Mosfetsmentioning

confidence: 99%

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

111

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“…Hence, chip B has to conduct more current during the miller phase, turns on sooner and turns off later than chip A. Additionally, the combination of the onstate resistance and the position in the test setup leads to a small DC current imbalance. However, this has only a minor influence on the current maldistribution during the switching phase (also seen in [7,26]). Fig.…”

Section: Device Simulationmentioning

confidence: 99%

Modelling parallel SiC MOSFETs: thermal self‐stabilisation vs. switching imbalances

Bertelshofer

März

Bakran

2019

IET Power Electronics

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This article presents a numerical method in combination with a device simulation model used to analyse the parallel connection of several silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) dies. Parallel connection is necessary to achieve the desired current carrying capability of the main inverters for xEV-drives. With this method, the effect of asymmetries within the chips' parameters, especially the gate threshold voltage, is investigated. The investigation results quantify to what extent the positive temperature coefficient of the on-state resistance can mitigate the overheating of one chip caused by switching loss imbalance. The results are used to define the necessary derating of the inverter output power so that no single chip is thermally overstressed.

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“…Since the starting current of an asynchronous motor (AM) is several times higher than its rated current [1][2][3][4][5][6], significant network voltage sags occur during start-up. Such voltage sags (VSs) affect electricity consumers connected to the network, which may have different levels of impedance to VSs and different qualities of electricity, and may also lead to an emergency situation and de-energizing of the system [7][8][9][10][11][12][13][14]. Exceeding the level of stability of the electric receiver against VSs generally leads to a violation of the conditions for its normal functioning or to failure.…”

Section: Introductionmentioning

confidence: 99%

Simulation-Based Analysis of Dynamics of Autonomous Electric Power Systems

Awwad¹,

Al-Soud²,

Al-Quteimat³

et al. 2022

MMEP

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This paper is devoted to the development of a model of an autonomous electric power system to study random processes of voltage, current and power changes in emergency and dynamic operation modes. A diagram for calculating short-circuit currents has been presented, which was focused on a typical wide range of autonomous power plants with three diesel generator units. A model of an autonomous power plant has been developed, allowing to solve the assignments of determining short-circuit currents and starting currents of electric power machines. The equivalent network of the studied power system for transient calculations has been presented. Thus, the voltage waveforms have been obtained. A comparative assessment of theoretical calculation methods and simulation analysis demonstrated a high degree of accuracy of the simulation results. The use of approach suggested in the article and the developed model allows to increase the accuracy of conclusions when testing the abruptly variable processes and to make the most reasonable choice of measures to improve the quality of electricity and the reliability of electrical equipment. In particular, simulation analysis and obtaining transient curves for starting powerful consumers allow more accurately choose the type of circuit breakers used and the related configuration parameters.

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Operation of planar and trench SiC MOSFETs in a 10kW DC/DC-converter analyzing the impact of the body diode

Cited by 10 publications

References 7 publications

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Modelling parallel SiC MOSFETs: thermal self‐stabilisation vs. switching imbalances

Simulation-Based Analysis of Dynamics of Autonomous Electric Power Systems

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