Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistor

Cheng, Zhiqun; Zhou, Xiaopeng; Hu, Sha; Wei-jian, Zhou; Sheng, Zhang

doi:10.7498/aps.59.1252

Cited by 6 publications

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“…An average electron mobility of 1800 cm 2 /(V • s) and a sheet carrier density of 1.0×10 13 cm −2 are obtained by the room-temperature Hall measurement. In our previous papers, [2,3] we have reported in detail the design process and the advantage of the novel structure of the AlGaN/GaN HEMT.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Cheng

Liu

et al. 2011

Chinese Phys. B

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In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.

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Section: Device Structure and Fabricationmentioning

confidence: 99%

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Cheng

Liu

et al. 2011

Chinese Phys. B

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Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN

Cheng

Zhou

et al. 2011

Micro & Optical Tech Letters

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We consider an example with the following specifications: Si relative permittivity e r1 ¼ 11.9, Si conductivity r 1 ¼ 7.4S/m, lossless SiO 2 e r2 ¼ 4, Cu r c ¼ 5.8e7 S/m, a ¼ 10 lm Figure 4(a) presents the insertion losses of a corner (port 1) and a via near the center (port 6) in a 4-by-4 coated TSV via array. Figure 4(b) gives the return losses. These results are in good agreement with HFSS simulation. It shows that the center via has better high-frequency performance than the corner via because surrounding vias shield it from radiation.Figures 5(a) and 5(b) present the near end crosstalk at a corner via and a via near the center, respectively. It shows the coupling issues among the TSVs will become significant beyond 15 GHz. The crosstalk at the corner via is much stronger than at vias near the center, because scattered radiation accumulates at the via array boundary. Because of the larger separation of diagonal vias, the diagonal crosstalk is usually weaker than the adjacent crosstalk. The CPU time required to simulate a 4-by-4 TSV via array using Matlab code is 5.89 s for 79 frequency points from 1 to 40 GHz, whereas HFSS simulations took 15 h and 43 min for the same structure. All data were generated using an Intel Xeon 2.93G Quad-core processor. The results of these two methods agree well, except small differences below 5 GHz. We will use a quasi-static approach to analyze low-frequency behavior in a future study. 2. B. Wu and L. Tsang, Modeling multiple vias with arbitrary shape of antipads and pads in high speed interconnect circuits, IEEE Microwave Wireless Comp Lett 19 (2009), 12-14. 3. B. Wu and L. Tsang, Full-wave modeling of multiple vias using differential signaling and shared antipad in multilayered high speed vertical interconnects, Prog Electromagn Res 97 (2009), 129-139. 4. B. Wu and L. Tsang, Signal integrity analysis of package and printed circuit board with multiple vias in substrate of layered dielectrics, IEEE Trans Adv Packag 33 (2010), 510-516. 5. H. Hasegawa, M. Furukawa, and H.

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Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

Wang¹,

Chen²,

Zhang³

et al. 2012

Chinese Phys. B

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In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal—insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self-protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias (> 70 V/μm) and suppress the leakage current (< 5 × 10−11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

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Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistor

Cited by 6 publications

References 0 publications

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN

Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

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Optimization design of high linearity AlxGa1-xN/AlyGa1-yN/GaN high electron mobility transistor

Cited by 6 publications

References 0 publications

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network*

Effect of composited‐layer AlyGa1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier AlxGa1‐xN

Monolithic integration of an AlGaN/GaN metal—insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

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Effect of composited‐layer Al_yGa_1‐yN on performances of AlGaN/GaN HEMT with unintentionally doping barrier Al_xGa_1‐xN